| 论文编号: | 172511O120130202 |
| 作者: | 吴利华 |
| 论文出处: | 2013 IEEE S3S |
| 刊物名称: | 2013 IEEE S3S |
| 年: | 2013-10-07 |
| 期: | 2013 |
| 页: | 1 |
| 联系作者: | 吴利华 |
| 摘要: | A 330,000 gate field programmable gate array (FPGA) VS12C fabricated on 0.2μm full-depletion silicon-on- insulator (FD SOI) process is presented and the test results indicate this chip has the lower power and higher tolerance to radiation compared with Xilinx radiation-hardened XQVR300 chip implemented on 0.22μm epitaxial silicon. This paper demonstrates the benefit of the FD SOI technology on low power and radiation-tolerant FPGA circuit design. |
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