论文编号: 1725110120150135
第一作者所在部门: 微电子重点实验室
论文题目: Simulation of thermal crosstalk of resistive switching memory in three-dimensional crossbar structure
刊物名称: Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
: 2015
: 15538573
: 438-441
联系作者: 卢年端,李泠,刘明