论文编号: | 1725110120150135 |
第一作者所在部门: | 微电子重点实验室 |
论文题目: | Simulation of thermal crosstalk of resistive switching memory in three-dimensional crossbar structure |
刊物名称: | Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on |
年: | 2015 |
期: | 15538573 |
页: | 438-441 |
联系作者: | 卢年端,李泠,刘明 |
科研产出