| 论文编号: | 1725110120160336 |
| 第一作者所在部门: | |
| 论文题目: | High Noise Margin 12T Subthreshold SRAM cell with Enhanced Read Speed and Eliminated Half-selected Problem |
| 论文题目英文: | |
| 作者: | 蔡江铮 |
| 论文出处: | |
| 刊物名称: | Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on |
| 年: | 2016 |
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| 期: | 1 |
| 页: | 1 |
| 联系作者: | 黑勇 |
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| 英文摘要: | |
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