| 论文编号: | 1725110120160263 |
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| 论文题目: | Simulation On Threshold Voltage Of L-Shaped Bottom Select Transistor In 3D NANDFlash Memory |
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| 作者: | 张瑜 |
| 论文出处: | |
| 刊物名称: | 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology |
| 年: | 2016 |
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| 期: | 1 |
| 页: | 55 |
| 联系作者: | 霍宗亮,靳磊 |
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科研产出