| 论文编号: | 1725110120160257 |
| 第一作者所在部门: | |
| 论文题目: | Impact of Critical Geometry Dimension on Channel Boosting Potential in 3D NAND Memory |
| 论文题目英文: | |
| 作者: | 姜丹丹 |
| 论文出处: | |
| 刊物名称: | 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology |
| 年: | 2016 |
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| 期: | 1 |
| 页: | 090 |
| 联系作者: | 霍宗亮,夏志良 |
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| 英文摘要: | |
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科研产出