| 论文编号: | 1725110120160169 |
| 第一作者所在部门: | |
| 论文题目: | Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment |
| 论文题目英文: | |
| 作者: | 彭朝阳 |
| 论文出处: | |
| 刊物名称: | Materials Science Forum |
| 年: | 2016 |
| 卷: | |
| 期: | 858 |
| 页: | 647 |
| 联系作者: | 申华军 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | |
科研产出