| 论文编号: | 1725110120160092 |
| 论文题目: | A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up |
| 作者: | 杨飞 |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2016 |
| 卷: | 37 |
| 期: | 9 |
| 页: | 1174 |
| 联系作者: | 朱阳军 |
| 论文编号: | 1725110120160092 |
| 论文题目: | A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up |
| 作者: | 杨飞 |
| 刊物名称: | IEEE Electron Device Letters |
| 年: | 2016 |
| 卷: | 37 |
| 期: | 9 |
| 页: | 1174 |
| 联系作者: | 朱阳军 |
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