1999年：毕业于吉林大学，电子工程系，获博士学位

1999-2002：日本北海道大学，量子电子学研究中心

2002-2004：德国Duisbur-Essen大学

2004-2006：日本电气通信大学

2006-至今：中国科学院微电子研究所

973项目“新一代化合物半导体器件和电路研究”子课题“新结构HBT器件”（2008年完成）

院装备研制项目“3毫米微波器件与电路在片综合测试系统”（2007-2009）

973项目“超高频大功率化合物半导体基础问题研究”子课题“太赫兹三端电子器件研究”（2010-2015）

[1] Jin Zhi, YB Su, et al. “Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz,” Solid-State Electronics , Vol. 52, 1088, 2008. 

[2] Jin Zhi, Liu Xinyu, “On the design of base-collector junction of InGaAs/InP DHBT,” Science in China Series E: Technological Sciences, Vol. 52, 1672, 2009.

[3] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High Current Multi-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz,” Chin. Phys. Lett., Vol. 25, pp. 3075-3078, 2008.

[4] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft of 170 GHz and fmax of 253 GHz,” Chin. Phys. Lett., Vol. 25, pp. 2686-2689, 2008.

[5] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage,” Chin. Phys. Lett., Vol. 25, pp. 2683-2685, 2008.

[6] Jin Zhi, Liu Xinyu, Wener Prost, F.-J. Tegude, “Surface-recombination-free InGaAs/InP HBTs and the base contact recombination,” Solid-State Electronics, Vol. 52, pp. 1088-1091, 2008.

[7] Jin Zhi, W. Prost, S. Neumann, F.-J. Tegude, “Current transport mechanism and its effects on the performance of InP-based double heterojuction bipolar transistors with different base structures,” Applied Physics Letters, Vol. 84, 2910, 2004.

[8] Jin Zhi, S. Neumann, W. Prost, F.-J. Tegude, “Surface recombination mechanism in graded- base InGaAs/InP hetero- structure bipolar transistors,” IEEE Trans. Electron Devices, Vol. 51, 1044, 2004.