教育背景  

1998.9-2002.7   山东大学               工学学士 

2003.9-2009.7   中国科学院微电子研究所 工学博士 

2016.11-2017.12 德克萨斯大学奥斯汀分校 访问学者 

工作简历  

2009.7-2011.9 中国科学院微电子研究所 助理研究员 

2011.9-2021.7 中国科学院微电子研究所 副研究员 

2021.7-至今  中国科学院微电子研究所 研究员 

1.     Gaobo Xu, Qiuxia Xu, Thermal stability of HfTaON films prepared by physical vapor deposition, Journal of Semiconductors, 2009, 30 (2): 023002. 

2.    Gaobo Xu, Qiuxia Xu, Characteristics of high-quality HfSiON gate dielectric prepared by physical vapor deposition, Chinese Physics B, 2009, 18 (2): 768-772. 

3.     Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Huajie Zhou, Tao Yang, Jiebin Niu, Jiahan Yu, Junfeng Li and Chao Zhao, High performance HfSiON/TaN NMOSFET with a gate-last process, Chinese Physics B, 2013, 22(11): 117309. 

4.     Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Huajie Zhou, Tao Yang, Jiebin Niu, Xiaobin He, Lingkuan Meng, Jiahan Yu, Junfeng Li, Jiang Yan, Chao Zhao and Dapeng Chen, Characterization of HfSiAlON/MoAlN PMOSFET fabricated using a novel gate-last process, Chinese Physics Letters, 2013, 30(8): 087303. 

5.     Qiuxia Xu, Gaobo Xu, Huajie Zhou, Huilong Zhu, Qingqing Liang, Jinbiao Liu, Junfeng Li, Jinjuan Xiang, Miao Xu, Jian Zhong, Weijia Xu, Chao Zhao, Dapeng Chen and Tianchun Ye, Ion implanted TiN metal gate with dual-band edge work function and excellent reliability for advanced CMOS device applications, IEEE Transaction on Electron Devices, 2015, 62(12): 1-7. 

6.     Guoliang Tian, Jinshun Bi*, Gaobo Xu*, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang, Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Science China. Information Sciences, 2020, 63(12)：229403. 

7.    Guoliang Tian, Jinshun Bi*, Gaobo Xu*, Kai Xi, Huaxiang Yin, Qiuxia Xu and Wenwu Wang, Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation, Semiconductor Science and Technology, 2020, 35(10): 105010.  

8.    Gangping Yan, Gaobo Xu*, Jinshun Bi*, Guoliang Tian, Qiuxia Xu, Huaxiang Yin, Yongliang Li, Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET), Microelectronics Reliability, 2020, 114(9): 113855. 

9.    Gangping Yan, Kai Xi, Gaobo Xu*, Jinshun Bi*, Huaxiang Yin, Analysis of Single Event Effects in Capacitor-Less 1T-DRAM Based on an InGaAs Transistor, IEEE Transactions on Electron Devices, 2021, 68(4): 1604-1609. 

10.  Gangping Yan, Hong Yang, Weibing Liu, Na Zhou, Yanpeng Hu, Yunfei Shi, Jianfeng Gao, Guoliang Tian, Yadong Zhang, Linjie Fan, Guilei Wang, Gaobo Xu*, Jinshun Bi , Huaxiang Yin*, Chao Zhao, and Jun Luo, Mechanism Analysis of Ultralow Leakage and Abnormal Instability in InGaZnO Thin-Film Transistor Toward DRAM, IEEE Transactions on Electron Devices, 2022, 69 (5): 2417-2422.