教育背景

2000-2004，中国科学技术大学物理系，本科学历，学士学位

2004-2009，中国科学院半导体研究所，研究生学历，博士学位

工作简历

2009年-今，中国科学院微电子研究所

国家重大科技专项，“高频段5G基站用功率放大器”

1. Ding Peng, Chen Chen, Ding Wuchang, et al. “Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance”, SOLID-STATE ELECTRONICS, vol. 123, pp. 1-5, 2016;

2. Ding Wuchang, Jia Rui, Li Haofeng et al. “Design of two dimensional silicon nanowire arrays for antireflection and light trapping in silicon solar cells”, JOURNAL OF APPLIED PHYSICS, Vol. 115, pp. 014307, 2014;

3. Ding Wuchang, Jia Rui, Wu Deqi, et al. “Numerical simulation and modeling of spectral conversion by silicon nanocrystals with multiple exciton generation”, JOURNAL OF APPLIED PHYSICS, vol. 109, pp.054312, 2011;

4. Ding Wuchang, Jia Rui, Cui Dongmeng, et al. “Light confinement for silicon solar cells with thin substrate”, 39th IEEE Photovoltaic Specialists Conference, pp.2633-2636, 2013;

5. Ding Wuchang, Wang Qiming, et al. “A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions”, CHINESE PHYSICS B, vol.18, pp. 3044-3048;

6. 丁武昌，“光管理在晶体硅电池中的应用”，中国光学，vol.6, pp.717-728;