代表性论文：

1. Ziyi Hu, Hua Shao, Junjie Li, et al., Rui Chen*, Yayi Wei*, Modeling of Micro-trenching and Bowing Effects in Nano-scale Si Inductively Coupled Plasma Etching Process, Journal of Vacuum Science & Technology A, 41(6) (2023)

2. Enxu Liu, Junjie Li*, Na Zhou, et al., Rui Chen*, Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process, Nanomaterials, 13(14):2127 (2023)

3. Hua Shao, Rui Chen*, Lisong Dong, Chen Li, Qi Yan, Taian Fan, and Yayi Wei*, High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma     Enhanced Chemical Vapor Deposition, IEEE Transactions on Semiconductor Manufacturing, 35(2): 309-317 (2022)

1. Zemeng Feng†, Ziyi Hu1†, Tong Yu†, Panpan Lai, Rui Ge, Hua Shao, Dashan Shang, Zhiqiang Li, Kui Xu, Junjie Li*, Rui Chen*, and Ling Li, First large-scale (68×25×5 nm3) atomistic modeling for accurate and efficient etching process based on machine learning molecular dynamics (MLMD). 2024 IEEE International Electron Devices Meeting (IEDM). IEEE, 2024.

2.  Ziyi Hu, Junjie Li, Rui Chen*, Dashan Shang, Yayi Wei*, Zhongrui Wang*, Ling Li, Lado Filipovic, A two-step dry etching model for non-uniform etching profile in gate-all-around field-effect transistor manufacturing. Small, 2024, 2405574.

3. Zhenjie Yao, Ziyi Hu, Panpan Lai, Fengling Qin, Wenrui Wang, Zhicheng Wu, Lingfei Wang, Hua Shao, Yongfu Li, Zhiqiang Li, Zhongming Liu, Junjie Li*, Rui Chen*, Ling Li, Cascade Recurrent Neural Networks for Etching Process Prediction. Engineering Applications of Artificial Intelligence, 139 (2025): 109590.

4. Hua Shao, Tobias Reiter, Rui Chen*, Junjie Li*, Ziyi Hu, Yayi Wei*, Ling Li, Lado Filipovic, Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors. ACS Applied Electronic Materials 6.11 (2024): 8124-8133.

5. Ziyi Hu, Lado Filipovic, Junjie Li, Lingfei Wang, Zhicheng Wu, Rui Chen*, Yayi Wei*, and Ling Li, Modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs. 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2024: 1-4.

6. Jichang Yang†, Hegan Chen1†, Jia Chen, Songqi Wang, Shaocong Wang, Yifei Yu, Bo Wang, Ning Lin, Xinyuan Zhang, Rui Chen, Zhongrui Wang*, Dashan Shang*, Han Wang*, Qi Liu, and Ming Liu, Conditional Diffision Model Acceleration with First-Demonstrated RRAM-based In-memory Neural Differential Equation Solver. 2024 IEEE International Electron Devices Meeting (IEDM). IEEE, 2024.

7. Qing Zhang, Yuhang Zhang, Rui Chen, Wei Lu, Huajie Huang, Zhiqiang Li*, and Yongfu Li*, pFed-Litho: Lithography Modeling With a Personalized Federated Learning Based Framework. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (2024).

8.  Ziyi Hu, Hua Shao*, Junjie Li, Panpan Lai, Wenrui Wang, Chen Li, Qi Yan, Xiaobin He, Junfeng Li, Tao Yang, Rui Chen*, Yayi Wei*, Modeling of Micro-trenching and Bowing Effects in Nano-scale Si Inductively Coupled Plasma Etching Process, Journal of Vacuum Science & Technology A, 41(6) (2023).

9.  Enxu Liu, Junjie Li*, Na Zho, Rui Chen*, Hua Shao, Jianfeng Gao, Qingzhu Zhang, Zhenzhen Kong, Hongxiao Lin, Chenchen Zhang, Panpan Lai, Chaoran Yang, Yang Liu, Guilei Wang*, Chao Zhao, Tao Yang, Huaxiang Yin, Junfeng Li, Jun Luo, Wenwu Wang, Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process, Nanomaterials, 13(14):2127 (2023).

10. Hua Shao, Rui Chen*, Lisong Dong, Chen Li, Qi Yan, Taian Fan, and Yayi Wei*, High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma Enhanced Chemical Vapor Deposition, IEEE Transactions on Semiconductor Manufacturing, 35(2): 309-317 (2022)