1、北京市科委港澳合作项目 超薄势垒Si基GaN增强型器件与单片集成技术 项目负责人 2021.8-2023.8 

1. Tiantian Luan; Qimeng Jiang; Sen Huang; Xinhua Wang; Hao Jin; Fuqiang Guo; Yixu Yao; Jie Fan; Haibo Yin; Ke Wei; Yankui Li; Haojie Jiang; Junfeng Li; Xinyu Liu，“Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures”，Microelectronic Engineering, 2023 

2. Hao Jin; Qimeng Jiang; Sen Huang; Xianping Wang; Yingjie Wang; Zhongchen Ji; Xinyue Dai; Chao Feng; Jie Fan; Ke Wei; Jianxun Liu; Yaozong Zhong; Qian Sun; Xinyu Liu,” An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage”, IEEE Electron Device Letters, 2022 

3. Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Lan Bi; Hao Jin; Xinyue Dai; Yifei Huang; Jie Fan; Ke Wei; Jinjuan Xiang; Haojie Jiang; Junfeng Li; Wenwu Wang; Xinyu Liu,” Investigation of Dynamic-QGD on Enhancement-Mode AlGaN/GaN MIS-HEMTs with SiNx Passivation Dielectric”, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.  

4. Lan Bi; Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Hao Jin; Xinyue Dai; Zhengyuan Xu; Jie Fan; Haibo Yin; Ke Wei; Xinyu Liu,” Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs”, Journal of Semiconductors, 2022 

5. Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Xiaorong Luo; Hao Jin; Fuqiang Guo; Haibo Yin; Jingyuan Shi; Haojie Jiang; Junfeng Li; Wenwu Wang; Bo Shen; Ke Wei; Xinyu Liu，“Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy”, Applied Physics Letters, 2021 

6. Lan Bi; Qimeng Jiang; Sen Huang; Xinhua Wang; Yingjie Wang; Yuchen Li; Fuqiang Guo; Luan, Tiantian; Yang Liu; Jie Fan; Haibo Yin; Ke Wei; Yingkui Zheng; Yankui Li; Xinyu Liu，“Impact of Vth Insability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC”，IEEE Electron Device Letters，2021