教育背景 

2007年9月—2011年6月  杭州电子科技大学集成电路设计与集成系统本科学习，获得集成电路设计与集成系统学士学位。 

2011年9月—2014年3月  天津理工大学微电子学与固体电子学硕士研究生学习，获得微电子学与固体电子学硕士学位。 

2014年9月—2017年7月  中国科学院大学微电子学与固体电子学博士研究生学习，获得微电子学与固体电子学博士学位。 

工作简历 

2017年7月—2019年12月  中国科学院微电子及器件与集成技术重点实验室，助理研究员

2019年12月—2021年9月  中国科学院微电子及器件与集成技术重点实验室，副研究员 

2021年9月—2022年9月  中国科学院微电子及器件与集成技术重点实验室，副主任、副研究员 

2022年9月—2023年7月  中国科学院微电子及器件与集成技术重点实验室，副主任、研究员 

2023年7月—至今     中国科学院微电子及器件与集成技术研发中心，主任、研究员

新型存储器 

1.Wang, Yuan, Lei Tao, Roger Guzman, Qing Luo*, Wu Zhou, Yang Yang, Yingfen Wei et al. "A stable rhombohedral phase in ferroelectric Hf (Zr) 1+ x O2 capacitor with ultralow coercive field." Science 381, no. 6657 (2023): 558-563. 

2.Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, and Ming Liu, “A highly CMOS compatible hafnia-based ferroelectric diode” Nature Communications, 2020, 11(1). 

3.Qing Luo, Bing Chen，Rongrong Cao, Xiaoyong Xue, Keji Zhou, Jianguo Yang, Xu Zheng, Haoran Yu, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Qi Liu, Hangbing Lv, and Ming Liu, “Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications”, IEDM Tech. Dig. 38.5 (2019) 

4.Tiancheng Gong, Lei Tao, Junkang Li, Yan Cheng, Yannan Xu, Wei Wei, Pengfei Jiang, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Yang Yang, Yan Wang, Bing Chen, Qing Luo*, Steve S Chung, Shixuan Du, Ming Liu. "10⁵× endurance improvement of FE-HZO by an innovative rejuvenation method for 1z node NV-DRAM applications." Symposium on VLSI Technology (2021) 

5.Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu. “A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier”, ISSCC ,pp. 1-3 (2023) 

6.Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Steve S. Chung, Jing Li, and Ming Liu, “Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells”, IEDM Tech. Dig., 10.2: (2015). 

7.Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Nianduan Lu, and Ming Liu, “Cu BEOL compatible selector with high selectivity (>10⁷), extremely low off-current (~pA) and high endurance (>10¹⁰)”, IEDM Tech. Dig., 10.4: (2015). 

8.Qing Luo, Xiaoxin Xu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Ling Li, Nianduan Lu, and Ming Liu, “Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance”, IEDM Tech. Dig., 11.7: (2016) 

9.Qing Luo, Xiaoxin Xu, Tiancheng Gong, Hangbing Lv, Danian Dong, Haili Ma, Peng Yuan, Jianfeng Gao, Jing Liu, Zhaoan Yu, Junfeng Li, Shibing Long, Qi Liu, and Ming Liu, “8-layers 3D vertical RRAM with excellent scalability towards storage class memory applications”, IEDM Tech. Dig. 2.7 (2017) 

10.Qing Luo, Tiancheng Gong, Yan Cheng, Qingzhu Zhang, Haoran Yu, Jie Yu, Haili Ma, Xiaoxin Xu, Kailiang Huang, Xi Zhu, Danian Dong, Jiahao Yin, Peng Yuan, Lu Tai, Jianfeng Gao, Junfeng Li, Huaxiang Yin, Shibing Long, Qi Liu, Hangbinh Lv, and Ming Liu, “Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects”, IEDM Tech. Dig. 2.6 (2018)