| 专著名称: | IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology |
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| 主编单位: | IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology |
| 出版时间: | 2012-10-31 |
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| 编写人员: | 刘洪刚 |
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| 著作性质: | 半导体器件与技术 |
| 编辑出版单位: | IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology |
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| 参编内容: | GaSb pMOSFET源漏欧姆接触优化 |
| 著作简介: | In this paper, source/drain ohmic contact for GaSb pMOSFETs has been extensively studied and optimized. Different concentrations of HCl-based solutions are used to clean the non-self limiting and non-stable native oxide layer of GaSb surface before source/drain ohmic contact metal deposition. Ni/Pt/Au, Ti/Pt/Au, Ni/Au, and Pt/Ti/Pt/Au contacts to p-type GaSb are investigated. The Ni/Pt/Au ohmic contact shows an optimal specific contact resistance of about 6.89×10-7 Ω·cm2 with 1 min RTA at 250 oC after the contact metal deposition. |
| 其它备注: | 国外出版-外文 |
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