| 论文编号: | 172511O120100106 |
| 第一作者所在部门: | 研究生5,三室一组 |
| 论文题目: | 采用覆盖金属纳米晶的下电极来控制固态电解液类型的阻变存储器中导电细丝的生长 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | SCI收录 |
| 刊物名称: | ACS NANO |
| 年: | 2010 |
| 卷: | 4 |
| 期: | 10 |
| 页: | 6162-6168 |
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| 影响因子: | 7.493 |
| 摘要: | Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog circuits, and neuromorphic applications. The underlying resistive switching (RS) mechanism of ReRAM is suggested to be the formation and rupture of nanoscale conductive filament (CF) inside the solid-electrolyte layer.However, the random nature of the nucleation and growth of the CF makes their formation difficult to control, which is a major obstacle for ReRAM performance improvement. Here, we report a novel approach to resolve this challenge by adopting a metal nanocrystal (NC) covered bottom electrode (BE) to replace the conventional ReRAM BE. As a demonstration vehicle, a Ag/ZrO2/Cu NC/Pt structure is prepared and the Cu NC covered Pt BE can control CF nucleation and growth to provide superior uniformity of RS properties. The controllable growth of nanoscale CF bridges between Cu NC and Ag top electrode has been vividly observed by transmission electron microscopy (TEM). On the basis of energy-dispersive X-ray spectroscopy (EDS) and elemental mapping analyses, we further confirm that the chemical contents of the CF are mainly Ag atoms. These testing/metrology results are consistent with the simulation results of electric-field distribution, showing that the electric field will enhance and concentrate on the NC sites and control location and orientation of Ag CFs. |
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