| 论文编号: | 172511O120100144 |
| 第一作者所在部门: | 一室一组 |
| 论文题目: | 深亚微米PDSOI热阻提取 |
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| 作者: | 韩郑生 |
| 论文出处: | EI收录 |
| 刊物名称: | 半导体学报 |
| 年: | 2010 |
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| 影响因子: | 0.2912 |
| 摘要: | Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35tm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction. |
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