| 论文编号: | 172511O120100208 |
| 第一作者所在部门: | 二室四组 |
| 论文题目: | 抗辐射加固256K CMOS SOI SRAM |
| 论文题目英文: | |
| 作者: | 赵凯 |
| 论文出处: | EI收录 |
| 刊物名称: | 2010 10th International Conference on Solid-State and Integrated Circuit Technology, Proceedings |
| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | A radiation hardened 256K-bit asynchronous SRAM is presented. It is fabricated by a 0.5-micron, radiation hardened CMOS PDSOI process with 3 layers of metal. It features 800uA stand-by current, 42ns access time, 300K rad(Si) total dose tolerant and 1.5×1011rad (Si)/s dose rate survivability. A 28-pin DIP package is used. The circuit operates with ambient temperature from -55 to +125°C and power supply from 4.5 to 5.5V. |
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