| 论文编号: | 172511O120100260 |
| 第一作者所在部门: | 三室一组 |
| 论文题目: | 无极性Cu/ZrO2:Cu/Pt阻变存储器中的Cu导电细丝的形成/破灭机制 |
| 论文题目英文: | |
| 作者: | 刘明 |
| 论文出处: | EI收录 |
| 刊物名称: | ISCAS |
| 年: | 2010 |
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| 影响因子: | 0 |
| 摘要: | We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors. The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. |
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| 备注: | International Symposium on Circuits and Systems |
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