| 论文编号: | 172511O120100323 |
| 第一作者所在部门: | 八室一组 |
| 论文题目: | 一种新方法制备太阳能电池用黑硅 |
| 论文题目英文: | |
| 作者: | 刘邦武 |
| 论文出处: | 其他国内刊物 |
| 刊物名称: | Photovoltaic Materials and Manufacturing Issues |
| 年: | 2010 |
| 卷: | |
| 期: | |
| 页: | |
| 联系作者: | |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Silicon is widely used for solar cells and other optoelectronic devices, but the flat silicon surfaces have a high natural reflectivity with a strong spectral dependence. The minimization of reflection losses is very important for these optoelectronic devices, in particular, for high efficiency solar cells. Here, we present a new method to prepare the black silicon by plasma immersion ion implantation with low price and high efficiency. The black silicon was characterized by scanning electron microscopy (SEM) and UV-VIS-NIR spectrophotometer. SEM results showed that the black silicon appeared porous structure. The formation mechanism of porous black silicon by plasma immersion ion implantation has been discussed. The average reflectance of black silicon was below 8% in the visible region. The effects of implantation condition (including voltage bias and SF6/O2 ratio) on the reflectance of the black silicon have been investigated. The results showed that the SF6/O2 ratio played an important role in the reflectance of the black silicon. The optimum SF6/O2 ratio is 2.8:1. The microwave photo-conductance decay (μ-PCD) technique was used to measure the minority carrier lifetime of the black silicon. The average minority carrier lifetime of the black silicon is 10.647μs. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | Photovoltaic Materials and Manufacturing Issues |
科研产出