| 论文编号: | 172511O120120318 |
| 第一作者所在部门: | 四室一组 |
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| 论文题目英文: | |
| 作者: | 金智 |
| 论文出处: | |
| 刊物名称: | CHINESE SCI BULL |
| 年: | 2012 |
| 卷: | 57 |
| 期: | 19 |
| 页: | 2401 |
| 联系作者: | 金智 |
| 收录类别: | |
| 影响因子: | 0.732 |
| 摘要: | We report on a demonstration of top-gated graphene field-effect transistors (FETs) fabricated on epitaxial SiC substrate. Compo- site stacks, benzocyclobutene and atomic layer deposition Al O , are used as the gate dielectrics to maintain intrinsic carrier mo- 2 3 bility of graphene. All graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on 2 /(V s), a maximum cutoff frequency of 4.6 GHz and a max- gate and drain voltages. Despite a low field-effect mobility of 40 cm imum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm. |
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| 备注: | SCI收录 |
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