| 论文编号: | 172511O120120315 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application |
| 论文题目英文: | |
| 作者: | 刘新宇 |
| 论文出处: | |
| 刊物名称: | Chinese Physics B |
| 年: | 2012 |
| 卷: | |
| 期: | 12 |
| 页: | 128501-1 |
| 联系作者: | 刘新宇 |
| 收录类别: | |
| 影响因子: | 2.544 |
| 摘要: | In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
科研产出