| 论文编号: | 172511O120120203 |
| 第一作者所在部门: | 二室四组 |
| 论文题目: | 0.2um的全耗尽SOI工艺的低功耗128K SRAM和它的抗辐射特性 |
| 论文题目英文: | |
| 作者: | 于芳 |
| 论文出处: | |
| 刊物名称: | ICSICT2012 |
| 年: | 2012 |
| 卷: | |
| 期: | 11 |
| 页: | 256 |
| 联系作者: | 于芳 |
| 收录类别: | |
| 影响因子: | 0.2823 |
| 摘要: | A 128K-bit Low-Power SRAM with 0.2um Fully-Depleted(FD) SOI CMOS process is presented. First-cut dataIO and Busr-Splitting techniques are used in the SRAM circuit design to achieve 15uA stand-by mode current and 20uA~500uA active mode current after packaged in DIP28. The SRAM’s Total-Ionizing-Dose capability is about 20K rad(Si). |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | 其他国内刊物 |
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