| 论文编号: | 172511O120120161 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | 利用分子束外延技术在Ge(111)表面生长外延氧化铍 |
| 论文题目英文: | |
| 作者: | 刘洪刚 |
| 论文出处: | |
| 刊物名称: | Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials |
| 年: | 2012 |
| 卷: | 1 |
| 期: | 1 |
| 页: | 14 |
| 联系作者: | 刘洪刚 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Wurtzite BeO film has been successfully epitaxially grown on Ge (111) by plasma-assisted MBE method. The BeO film has been confirmed to be an effective IPL with high thermal stability to form germanium oxide free interface as well as reduce gate leakage current. The introduction of BeO IPL into Ge may open a new prospect for the realization of high-performance Ge MOSFETs. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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