| 论文编号: | 172511O120120160 |
| 第一作者所在部门: | 四室一组 |
| 论文题目: | 通过固相外延的方法在硅（111）衬底上外延高质量单晶锗（111)层 |
| 论文题目英文: | |
| 作者: | 刘洪刚 |
| 论文出处: | |
| 刊物名称: | Chinese Physics Letters |
| 年: | 2012 |
| 卷: | 29 |
| 期: | 3 |
| 页: | 036102-1 |
| 联系作者: | 刘洪刚 |
| 收录类别: | |
| 影响因子: | |
| 摘要: | Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111) substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques. High-quality single crystalline Ge(111) layers on Si(111) substrates with smooth Ge surface and abrupt interface between Ge and Si are obtained. An XRD rocking curve scan of the Ge(111) di？raction peak shows a full width at half maximum of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600±C with ramp-up rate of 20±C/s and holding time of 1 min. The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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