| 论文编号: | 172511O120120115 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 项金娟 |
| 论文出处: | |
| 刊物名称: | The 1st International Conference on ALD Applications & 2nd China ALD Conference, Shanghai (2012). Oral Presentation. |
| 年: | 2012 |
| 卷: | |
| 期: | 1 |
| 页: | 1 |
| 联系作者: | 项金娟 |
| 收录类别: | |
| 影响因子: | 1.762 |
| 摘要: | The electrical characteristics of ALD deposited HfO2 and TiN films are optimized to be compatible with gate last process. Equivalent oxide thickness (EOT) of 0.73 nm and flatband voltage (VFB) of -0.66 V, corresponding effective workfunction of 4.24 eV, are obtained for nMOS, together with leakage current (Lg) of 1.114 A/cm2. EOT of 0.9 nm and VFB of 0.65 V, corresponding effective workfunction of 4.95 eV, are estimated for pMOS application, with the Lg of 0.86 A/cm2. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | 其他国外刊物 |
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