| 论文编号: | 172511O120120113 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 宋毅 |
| 论文出处: | |
| 刊物名称: | IEEE Electron Devices |
| 年: | 2012 |
| 卷: | |
| 期: | 7 |
| 页: | 1885 |
| 联系作者: | 宋毅 |
| 收录类别: | |
| 影响因子: | 3.844 |
| 摘要: | We demonstrate high performance silicon nanowire gate-all-around MOSFETs (GAA SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type GAA SNWFETs of ∽50 nm gate length and of ∽6 nm in diameter show superior device performance, i.e., driving capability of 2.6*103/2.9*103u A/um at |VD|=|VG-Vt|=1.0 V, Ion/Ioff ratio as high as 5*108/109 and excellent short channel effects (SCEs) immunity with subthreshold slope (SS) of 67/64 mV/dec, Drain Induced Barrier Lowering (DIBL) of 6 mV/V, respectively. By experiment and TCAD simulation, we also compare GAA SNWFETs and FinFETs both fabricated on bulk Si and the superiority of GAA SNWFETs is revealed in this paper. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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