| 论文编号: | 172511O120120110 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | |
| 论文题目英文: | |
| 作者: | 孟令款 |
| 论文出处: | |
| 刊物名称: | 真空科学与技术学报 |
| 年: | 2012 |
| 卷: | |
| 期: | 9 |
| 页: | 793 |
| 联系作者: | 孟令款 |
| 收录类别: | |
| 影响因子: | 3.844 |
| 摘要: | A novel technique was developed to effectively planarize the high-K metal gate etch-back in the advanced CMOS fabrication, where the feature size is scaled down to 45 nm. In the newly-developed technique, the two-step spin on-glass plasma etch-back was combined with in-situ oxygen plasma treatment .The negative effect of the non-uniform distribution of the polymer on the reactive ion-etching rate was eliminated.As a result , the thickness non-uniformity within the-wafer(excluding the 5 mmwafer edges) can be easily realized. In the scanning electron micrographs of the planarized metal gate etch-back, no chemica-l mechanica-l polish-like dish effect was observed on both the isolated and the dense sub-micro gate-stack structures, indicating that the planarizat ion technology does a good job for the nano-scale high-K /metal gate-last CMOS device integration. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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