| 论文编号: | 172511O120120088 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 具有>6GPa压应力的四面体非晶碳薄膜表征及其应变沟道工程 |
| 论文题目英文: | |
| 作者: | 马小龙 |
| 论文出处: | |
| 刊物名称: | ECS Transactions |
| 年: | 2012 |
| 卷: | 44 |
| 期: | 1 |
| 页: | 779 |
| 联系作者: | 马小龙 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Tetrahedral Carbon (Ta-C) films with extremely high compressive stress (5~10GPa) were fabricated using double 90o-bend Filtered Cathodic Vacuum Arc (FCVA) technique. Sp3-bonding content in the film was estimated to be >65% determined by multi-wavelength Raman spectra and XPS analysis and it confirms the high quality of the deposited film. In comparison to conventional silicon nitride stress-liner, Ta-C is expected to generate several times higher compressive stress in the channel of sub-32nm p-MOSFET. The electrical performance enhancement induced by extremely high stress liner was investigated through TCAD simulations. The results indicate that a thin Ta-C stress-liner with extremely high compressive stress provides one promising solution for suppressing performance-enhancement degradation in conventional p-MOSFET structure while scaled into sub-32nm node. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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