| 论文编号: | 172511O120120107 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 任哲 |
| 论文出处: | |
| 刊物名称: | ECS Transactions |
| 年: | 2012 |
| 卷: | |
| 期: | 1 |
| 页: | volume 44 |
| 联系作者: | 任哲 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Due to its intrinsic structure, effective electrical isolation in bulk FinFET turns to be a critical concern for 22nm and beyond device performance. In this paper, an air-isolated fin structure for bulk FinFET is proposed and estimated. In addition, one state-of-the-art isolation approach, which contains a punch-through stopper (PTS) obtained from the lateral scattering of implanted ions in shallow trench isolation (STI) regions, is comparatively analyzed. As the fin width has been down to the sub-20 nm regime, the pros and cons of each approach are further evaluated. Our suggested airisolation structure shows superior electrical performance and this simulated result provides a reliable alternative to support the isolation technique development of 22nm and beyond bulk FinFET. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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