| 论文编号: | 172511O120120077 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 童小东 |
| 论文出处: | |
| 刊物名称: | Proc. of SISPAD |
| 年: | 2012 |
| 卷: | |
| 期: | 2012 |
| 页: | 316 |
| 联系作者: | 童小东 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | A novel 2-port vertical PNPN diode memory cell expected to increase the SRAM integration density was proposed in this work. Its optimization design to meet the power consumption and the operational speed requirements in conventional VLSI applications were discussed. The memory cell was fabricated. Its static I-V curve and low-frequency write operations were tested. Based on the test results, high-frequency simulations were further conducted with Sentaurus TCAD tools. At last, a SRAM circuit using this new cell with a cross-point structure was proposed. The disturb modes in operations were analyzed and mixed-mode simulation was used upon this circuit. The mixed-mode simulation result proves that this circuit design is feasible in advanced VLSI applications. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | ISTP收录 |
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