| 论文编号: | 172511O120120109 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 杨涛 |
| 论文出处: | |
| 刊物名称: | Electrochemical and Solid-State Letters |
| 年: | 2012 |
| 卷: | |
| 期: | 15 |
| 页: | 141 |
| 联系作者: | 杨涛 |
| 收录类别: | |
| 影响因子: | 1.466 |
| 摘要: | Compatibility of HfSiON high-k layer with wet etching using TMAH solution is studied for polycrystalline silicon dummy gate removal in high-k first gate-last process. The electrical and physical characterizations of the HfSiON layers after etching reveal that the HfSiON layer will be etched when exposed to the TMAH solution under certain conditions. No clear degradation, however, has been found after etching in a 10 vol% TMAH solution below 60dC, suggesting a processing window for polycrystalline silicon dummy gate removal in the high-k first metal gate last process. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | SCI收录 |
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