| 论文编号: | 172511O120120083 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | 无 |
| 论文题目英文: | |
| 作者: | 吴昊 |
| 论文出处: | |
| 刊物名称: | ECS Transactions |
| 年: | 2012 |
| 卷: | 44 |
| 期: | 1 |
| 页: | 15 |
| 联系作者: | 吴昊 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | Effects of dopant distribution in substrate/back-gate on performance and Vt roll-off of ET-SOI MOSFETs with UT-BOX (ES-UB-MOSFETs) are simulated and studied. Lateral nonuniform dopant distributions (LNDD) in substrate, for the first time, are used to enhance scaling capability and improve Vt controllability for ES-UB-MOSFETs. Process and device simulations are conducted to demonstrate the importance of substrate dopant engineering and to search the optimization design conditions for ES-UB-MOSFETs. Fixing long channel Vt at 0.3V for both bulk MOSFETs and ES-UB-MOSFETs, ES-UBMOSFETs with LNDD can improve Ieff@Ioff= 1e-7A/μm by 20% for nMOS and 18% for pMOS. With fixing long channel Vt at 0.3V for ES-UB-MOSFETs, LNDD enables gate length to be scaled to 20nm for both nMOS and pMOS, which is ~ 43% smaller than that of the ES-UB-MOSFETs with lateral uniform doping in substrate. A novel process flow to form LNDD is proposed and simulated. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | EI收录 |
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