| 论文编号: | 172511O120120059 |
| 第一作者所在部门: | 十室一组 |
| 论文题目: | HfO2/SiO2/Si栅结构的能带研究 |
| 论文题目英文: | |
| 作者: | 王晓磊 |
| 论文出处: | |
| 刊物名称: | APPL. PHYS. LETT. |
| 年: | 2012 |
| 卷: | |
| 期: | 100 |
| 页: | 122907 |
| 联系作者: | 王晓磊 |
| 收录类别: | |
| 影响因子: | 0.0967 |
| 摘要: | Band alignment of HfO2 with various thicknesses on SiO2/Si structure is investigated by X-ray photoelectron spectroscopy (XPS). Band bending of HfO2/SiO2/Si system is found to vary with HfO2 thickness. Band alignment of entire HfO2/SiO2/Si is demonstrated using concepts of interfacial or surface gap states and charge neutrality level (CNL). The XPS results are interpreted and attributed to lower CNL of HfO2 than SiO2/Si which induces electron transfer from SiO2/Si to HfO2, resulting in band bending upward for SiO2/Si. These further confirm feasibility of gap state based theory in investigating band alignments of oxide/semiconductor and oxide/oxide interfaces. |
| 英文摘要: | |
| 外单位作者单位: | |
| 备注: | 其他国外刊物 |
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