| 论文编号: | 172511O120130121 |
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| 作者: | 尹海洲 |
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| 刊物名称: | ECS Trans. |
| 年: | 2013-03-18 |
| 卷: | 52 |
| 期: | 1 |
| 页: | 677 |
| 联系作者: | 尹海洲 |
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| 摘要: | In this paper, a process challenge of integrating Dual Stress Liner (DSL) (1)-(2) into gate-last High-k/Metal Gate (HKMG) flow is explained and a solution is presented. DSL is an effective method to enhance carriers’ mobility for short channel devices. But when it is applied to gate-last HKMG flow, the dummy gate oxide removal step (wet etch by DHF solution) would result in significant etch of tensile SiN liner. Because tensile SiN liner is formed on gate spacers and is exposed after Poly-Open-Polish (POP) CMP, recesses at the sides of the gate stacks would be formed during dummy gate oxide etch. In order to solve this problem, tensile SiN liner is treated in N2 plasma to reduce it’s etch rate in DHF solution. As a result, no recess appears at the side of gate stacks in our devices during the dummy gate oxide removal step. |
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