教育背景
2000-2004：大连理工大学物理系 电子科学技术专业， 学士
2004-2009：北京大学物理学院 凝聚态物理专业， 博士
工作简历
2009-2012：香港科技大学电子及计算机工程学系 博士后
2012-2017：中科院微电子研究所 副研究员
2017至今：中科院微电子研究所 研究员
高性能GaN基电力电子和射频微波器件；Si基GaN智能功率集成电路；III族氮化物半导体电子器件的先进制备工艺，表征技术及器件物理
长期致力于高性能GaN基功率电子器件和物理研究，在超薄势垒AlGaN/GaN增强型器件设计，PEALD-AlN钝化，高温栅槽刻蚀和高绝缘O3-Al2O3和PEALD-SiNx栅介质工艺，以及大尺寸Si基GaN绝缘栅功率器件制造等方面取得一些较有国际影响力的创新成果。迄今在IEEE EDL/TED等电子器件知名期刊以及IEDM、ISPSD等微电子领域著名会议上发表论文100余篇，2篇入选ESI高被引论文。申请美国专利8项（授权6项），中国专利40余项（授权15项），部分技术成果已经被企业使用。
1. C. Feng, Q. Jiang, S. Huang*, X. Wang, and X. Liu, “Gate-Bias-Accelerated VTH Recovery on Schottky-Type p -GaN Gate AlGaN/GaN HEMTs,” IEEE Transactions on Electron Devices, vol. 70, no. 9, pp. 4591–4595, Sep. 2023, doi: 10.1109/TED.2023.3297568.
2. K. Deng, S. Huang*, et al., “Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors,” Applied Surface Science, vol. 638, no. April, p. 158000, Nov. 2023, doi: 10.1016/j.apsusc.2023.158000.
3. K. Deng, X. Wang, S. Huang*, et al., “Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices,” ACS Applied Material & Interfaces, vol. 15, no. 20, pp. 25058–25065, May 2023, doi: 10.1021/acsami.3c03094.
4. 黄森等, “面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件,” 电子与封装, vol. 23, no. 1, p. 010102, 2023, doi: 10.16257/j.cnki.1681-1070.2023.0021. (Invited)
5. S. Huang, et al., “Ultrathin-barrier AlGaN/GaN heterostructure: An AlGaN-recess-free technology for fabrication of lateral GaN-based power devices,” in 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar. 2022, vol. 2, pp. 393–395, doi: 10.1109/EDTM53872.2022.9797960. (Invited)
6. H. Jin, Q. Jiang, S. Huang*, et al., “An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage,” IEEE Electron Device Letters, vol. 43, no. 8, pp. 1191–1194, Aug. 2022, doi: 10.1109/LED.2022.3184998.
7. Y. Yao, S. Huang*, et al., “Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy,” IEEE Electron Device Letters, vol. 43, no. 2, pp. 200–203, Feb. 2022, doi: 10.1109/LED.2021.3135900.
8. Y. Yao, Q. Jiang, S. Huang*, et al., “Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy,” Applied Physics Letters, vol. 119, no. 23, p. 233502, Dec. 2021, doi: 10.1063/5.0078367.
9. L. Bi, Q. Jiang, S. Huang*, et al., “Impact of Vth Instability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC,” IEEE Electron Device Letters, vol. 42, no. 10, pp. 1440–1443, Oct. 2021, doi: 10.1109/LED.2021.3106785.
10. F. Guo, S. Huang*, et al., “Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments,” Applied Physics Letters, vol. 118, no. 9, p. 093503, Mar. 2021, doi: 10.1063/5.0041421.
11. X. Wang, Y. Zhang, S. Huang*, et al., “Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing,” ACS Applied Materials & Interfaces, vol. 13, no. 6, pp. 7725–7734, Feb. 2021, doi: 10.1021/acsami.0c19483.
12. K. Deng, X. Wang, S. Huang*, et al., “Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures,” Applied Surface Science, vol. 542, no. November 2020, p. 148530, Mar. 2021, doi: 10.1016/j.apsusc.2020.148530.
13. S. Huang, et al., “An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits,” Semiconductor Science and Technology, vol. 36, no. 4, p. 044002, Apr. 2021, doi: 10.1088/1361-6641/abd2fe. (Invited)
14. S. Huang, et al., “Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure,” IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 36–41, Jan. 2021, doi: 10.1109/TED.2020.3037272.
15. Y. Zhang, S. Huang*, et al., “Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess,” IEEE Electron Device Letters, vol. 41, no. 5, pp. 701–704, May 2020, doi: 10.1109/LED.2020.2984663.
16. R. Zhao, S. Huang*, et al., “Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs,”Applied Physics Letters, vol. 116, no. 10, p. 103502, Mar. 2020, doi: 10.1063/1.5134886.
1. Sen Huang, et al., “GaN-based Power Electronic Device and Method for Manufacturing the Same,” 授权专利号：US10,062,775 B2，公告日：2018年8月28日。
2. Sen Huang, et al., “Semiconductor Device and Method for Manufacturing the Same,” 授权专利号：US 10,749,021 B2，公告日：2020年8月18日。
3. Sen Huang, et al., “GaN-BASED SUPERJUNCTION VERTICAL POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF,” 授权专利号：US 11,289,594 B2，公告日：2022年3月29日。
4. 黄森等，“一种GaN基功率电子器件及其制备方法”，授权日：2019年2月1日，中国，专利号：ZL201610265883.8。
5. 黄森等，“增强型GaN基高电子迁移率晶体管及其制备方法”， 授权日：2019年3月15日，中国，专利号：ZL201610331114.3。
6. 黄森等，“GaN基单片功率变换器及其制作方法”，授权公告日：2020年9月15日，中国，专利号：ZL201711081965.8。
7. 黄森等，“GaN基单片功率逆变器及其制作方法”，授权公告日：2021年6月2日，中国，专利号：ZL201711081961.X。
8. 黄森等，“P型沟道GaN基结构及电子器件”，授权公告日：2022年6月1日，中国，专利号：ZL201910265671.3。
9. 黄森等，“基于氮化镓基增强型器件的探测器及其制作方法”，授权公告日：2023年5月2日，中国，专利号：ZL 201910732534.6。
2016年入选中国科学院青年创新促进会成员，获“中科院拔尖青年科学家”资助。
2019年获国家自然基金委“优秀青年基金”资助。
2020年获中国科学院青促会“优秀会员”基金滚动资助。
2021年获得北京市朝阳区“凤凰计划”科技创新领军人才资助。
2022年获得中国电子学会自然科学二等奖。
2022年获得中国仪器仪表学会技术发明二等奖。
人才队伍