教育背景
2007年9月-2012年7月，北京大学，凝聚态物理，博士
2010年1月-2010年7月，英国Strathclyde大学，光电子物理与器件，联合培养博士
2003年7月-2007年9月，南开大学，材料物理，学士
工作简历
2020年7月-今， 中国科学院微电子研究所，副研究员
2017年3月-2020年7月，中国科学院微电子研究所，助理研究员
2013年7月-2017年3月，北京新立基真空玻璃技术有限公司，技术副总监
2012年7月-2013年7月，京东方科技集团股份有限公司，高级研究员
1. 中国核学会辐射物理分会，会员
2. 国际知名期刊杂志Applied Physics Letters，Journal of Applied Physics，Optics Express，Optics Letters，Solar Energy，Applied Surface Science审稿人1. 中国科学院基础前沿科学研究计划从0到1原始创新项目，ZDBS-LY-JSC015，“晶圆级单晶二维层状半导体材料制备及相关高性能异质结构器件集成”，2019-2024年，300万元，在研，主持
2. 中国科学院近代物理研究所HIRFL用户培育项目，HIR19PY015，“高速数据传输光通信模块辐射效应研究”，2020-2021年，10万元，在研，主持
3. 中国原子能研究院抗辐照应用技术创新中心创新基金项目，KFZC2018040203，“重离子辐照改性制备量子通讯技术用BN单光子光源方法研究”，2018-2020年，15万元，在研，主持
4. 国家自然科学基金委员会与俄罗斯基础研究基金会合作交流项目，62011530040，纳米级半导体器件的综合辐射效应研究，2020-01至2021-12，14.46万元，在研，参与
5. 国家自然科学基金面上项目，61076013，“InGaN调制量子阱结构和性质”，2011-2013年，已结题，参与
6. 国家自然基金青年基金项目，51102003，“GaN基异质结构半导体光催化和微生物催化协同降解有机废水的研究”，2012-2014年，已结题，参与期刊论文：
1. Lei Wang, Ningyang Liu, Ligang Song, Bo Li, et al, Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes, IEEE Transactions on Nuclear Science, 65, 2784, 2018.
2. Lei Wang, Zhangxu Pan, Bo Li, Junjun Wang, et al, Mechanism Analysis of Proton Irradiation Induced Increase of 3dB Bandwidth of GaN-based Micro Light Emitting Diodes for Space Light Communication, IEEE Transactions on Nuclear Science, 67, 7, 1360, 2020.
3. Lei Wang, Ningyang Liu, Bo Li, Huiping Zhu, et al, Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, IEEE Transactions on Nuclear Science, 67, 7, 1345, 2020.
4. 王磊，李博，张学文，李彬鸿等，X射线和重离子辐射对GaN基发光二极管光学特性的影响，微处理机，第6期，第40卷，2019年。
5. Lei Wang, Cimang Lu, Jianing Lu, Lei Liu, et al, Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes, Optics Express, 19, 14182, 2011.
6. Lei Wang, Rui Li, Ding Li, Ningyang Liu, et al, Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer, Applied Physics Letters, 96, 061110, 2010.
7. Lei Wang, Rui Li, Ziwen Yang, Ding Li, et al, High spontaneous emission rate asymmetrically graded 480nm InGaN/GaN quantum well light-emitting diodes, Applied Physics Letters, 95, 211104, 2009.
8. Qingxuan Li, Bo Li, Lei Wang*, Baoping Zhang, et al, Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells, Journal of Luminescence, 210, 169, 2019.
9. Ningyang Liu, Qiao Wang, Bo Li, Lei Wang*, Point Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, Journal of Physical Chemistry: C, 123, 8865, 2019.
10. Lei Liu, Lei Wang, Ding Li, Ningyang Liu, et al, Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures, Journal of Applied Physics, 109, 073106, 2011.
11. Lei Liu, Lei Wang, Ningyang Liu, Ding Li, et al, Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes, Journal of Applied Physics, 101, 083101, 2012.
12. Cimang Lu, Lei Wang, Jianing Lu, Rui Li, et al, Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum wells light-emitting diodes under direct and pulse currents, Journal of Applied Physics, 113, 013102, 2013.
13. Lei Liu, Lei Wang, Cimang Lu, Ding Li, et al, Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer, Applied Physics A-Materials Science&Processing, 108, 771, 2012.
14. Lei Li, Lei Liu, Lei Wang, Ding Li, et al, The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates, Applied Physics A-Materials Science&Processing, 108, 857, 2012.
15. J. Zhang, X. Chen, L. Wang, Z. S. Zheng, et al, Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions, Journal of Applied Physics, 125, 115701, 2019.
16. Yan Cui, Huiping Zhu, Lei Wang, Bo Li, et al, A new type of magnetism-controllable Mn-based single-molecule magnet, Journal of Magnetism and Magnetic Materials, 458, 90, 2018.
17. Ningyang Liu, Ding Li, Lei Wang, Lei Liu, et al, Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations, Japanese Journal of Applied Physics, 51, 071001, 2012.
18. Ningyang Liu, Lei Liu, Lei Wang, et al, Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-like Defects, Chinese Physics B, 21, 117304, 2012.
19. Wei Yang, Ningyang Liu, Zhao Chen, Ding Li, Lei Wang, Lei Liu, Lei Li, Chenghao Wan, Weihua Chen and Xiaodong Hu. Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes. Applied Physics Letters, 100, 031105, 2012.
20. Lei Li, Justin P. C. Liu, Lei Liu, Ding Li, Lei Wang, Chenghao Wan, Weihua Chen, Zhijian Yang, Yahong Xie, Xiaodong Hu, and Guoyi Zhang, Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels, Applied Physics Express, 5, 051001, 2012.
21. Wang Wei, Yang Zi-wen, Yu Tao, Xing Bing, Wang Lei, Li Rui, Du Wei-min, Hu Xiao-dong, The Impact of Stripe With in the Variable Stripe Length Method on GaN Gain Measurements, Chinese Journal of Luminescence, 31, 86, 2008.
22. Chen Zhao, Yang Wei, Liu Lei, Wan Cheng-Hao, Li Lei, He Yong-Fa, Liu Ning-Yang, Wang Lei, Li Ding, Hu Xiao-Dong, and Chen Wei-Hua, Efficiency droop alleviation in the blue light emitting diodes by the InGaN/GaN triangular shaped quantum well, Chinese Physics B, 21 108505, 2012.
23. Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh-Jer Huang, Hsiao-Chiu Hsu, Yan-Kuin Su, Shoou-Jinn Chang, Lei Li, Ding Li, Lei Wang, Xiaodong Hu and Yahong Xie, Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN, Journal of Applied Physics, 113, 144908, 2013.
会议论文：
1. Lei Wang, Binhong Li, Junjun Wang, Xiaojun Guan, et al, Proton Irradiation Effects on the Static and Dynamic Characteristics of GaN-based Blue Light Emitting Diodes for Space Light Communication, RADECS 2019, Montpellier, France, 2019.
2. Lei Wang, Xuewen Zhang, Bo Li, Ningyang Liu, et al, Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, RADECS 2019, Montpellier, France, 2019.
3. Lei Wang, Qingxuan Li, Ningyang Liu, Ligang Song, et al, Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, RADECS 2018, Goteborg, Sweden, 2018.
4. Lei Wang, Rui Li, Lei Liu, and Xiaodong Hu, Analysis of Mg acceptors activation property in strain modulated AlGaN/GaN superlattices with AlN interlayer, ICNS 2011, Glasgow, UK, 2011.
5. Lei Wang, Rui Li, Ding Li, Ningyang Liu, et al, Improvement of electrical properties of p type AlGaN/GaN superlattices by inserting an AlN interlayer, ICSNN 2010, Beijing, China, 2010.
6. Lei Wang, Rui Li, and Ding Li, Low temperature cathodoluminescence investigation of the strain relaxtion in prestrained InGaN/GaN quantum wells, ISSLED 2010, Beijing, China, 2010.
7. Lei Wang, Rui Li, and Xiaodong Hu, Analysis of the effect of two series n-type of GaN/AlGaN superlattices on the crystal quality of the GaN/InGaN MQWs LD, APWS 2009, Zhangjiajie, China, 2009.
8. Xuewen Zhang, Lei Wang*, Bo Li, et al, Proton Irradiation effect on high efficient organic-inorganic metal halide perovskite solar cell, NSREC 2019, San Antonio, USA, 2019.
9. Xiaoting Shan, Yun Sun，Meng Xun, Lei Wang*, et al, Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers, NSREC 2020, New Mexico, USA, 2020.1. 王磊，李博，赵发展，韩郑生，罗家俊，刘新宇，一种单光子光源的制备方法及元器件，201811423197.4
2. 王磊，时东霞，周冠军，一种测量真空玻璃传热系数的装置，201611171344.4
3. 王磊，时东霞，周冠军，一种可以显示的真空玻璃， 201621387758.6
4. 王磊，田雪雁，任章淳低温多晶硅薄膜的制备方法，CN203456472U
5. 时东霞，周冠军，王磊，一种用于真空玻璃的吸气剂装置及其使用方法， 201611171333.62018年获得微电子所“科研新星”优秀奖
2018年获得微电子所“优秀员工”称号
人才队伍