教育背景：
1998.09-2002.07 北京大学 计算机科学与技术系 微电子与固体电子学专业 本科
2002.09-2005.07 北京大学 信息科学技术学院 微电子学系 硕士
2005.09-2011.07韩国三星电子 半导体事业部 高级工程师/工程师
2011.08-2020.06 中国科学院微电子研究所 集成电路先导工艺研发中心 副研究员
集成电路器件可靠性物理与工艺协同优化
1.校企产研项目，2023.04-2024.10，150万，项目负责人
2.地方企业项目，2023.01-2025.12，1438万，项目负责人
3.高技术项目，2020.08-2023.08，220万，项目负责人
1.Hao Chang, Qianqian Liu, Hong Yang* et.al, Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs using Gate Induced Drain Leakage, IEEE Electron Device Letters, 2023,44(3): 372-375.
2.Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Recovery Behavior of Interface Traps after Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique, IEEE Transactions on Electrons Devices, vol. 68, No. 9, pp. 4251-4258, Sep. 2021.
3.Longda Zhou, Zhaohao Zhang, Hong Yang* et.al, A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs, in IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021. (Oral)
4.Hao Chang, Longda Zhou, Hong Yang*, et.al, Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs, in IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021. (Oral)
5.Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si p-FinFETs, IEEE Electron Device Letters, pp.965-968, vol.41, issues7, July 2020.
6.Hong Yang, Weichun Luo, Longda Zhou et.al, Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs, IEEE Electron Device Letters, p.1129-1132, vol.39, issue 8, Aug. 2018.
已授权专利：
1.杨红等，美国专利，授权号：US9831089 B2
2.杨红等，美国专利，授权号：US8921171.B2
3.杨红等，中国专利，授权号：ZL201510661889.2
4.杨红等，中国专利，授权号：ZL201310331607.3
5.杨红等，中国专利，授权号：ZL201310160772.7
6.杨红等，中国专利，授权号：ZL201210246582.2
人才队伍