| 专著名称: | Technical Digest of Frontiers in Electronic Materials |
| 研究中心: | |
| 首席研究员: | |
| 主编单位: | Technical Digest of Frontiers in Electronic Materials |
| 出版时间: | 2012-06-17 |
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| 编写人员: | 刘明 |
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| 著作性质: | 电子、通信与自动控制技术 |
| 编辑出版单位: | Technical Digest of Frontiers in Electronic Materials |
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| 参编内容: | 导电细丝在基于氧化物固态电解质RRAM中的动态生长与溶解 |
| 著作简介: | Electric field or current induced resistance switching (RS) effect is an intriguing phenomenon that forms the basis for potential applications in fast speed and ultra-high density nonvolatile memories. An essential issue for continued device research in this field is to uncover the physical mechanism of RS process, which still remains elusive due to the lack of direct experimental evidence. Here, we present an effective approach to capture the microstructure changes of Cu (or Ag)/ZrO2/Pt systems at atomic resolutions when adding electrical signals on the device by using in-situ transmission electron microscope (TEM) technology. On the basis of this approach, we directly verify the existence of conductive filament (CF) and address several unresolved fundamental issues related to the RS effect, including the starting point of CF growth/dissolution, the direction of CF growth/dissolution, the number of filaments formed under the SET process, and the degree of CF dissolution under the RESET process. We find that the CFs start growth from anode (Ag or Cu) toward the cathode (Pt), which is contrary to the general belief of electrochemical metallization theory. We suggest that the differences of cations solubility and diffusion coefficient between traditional solid-electrolyte and oxide-electrolyte materials should be taken into consideration. Based on the results, a modified microscopic mechanism based on the local redox reaction inside the oxide-electrolyte system is suggested to account for observed RS effect. It is noteworthy that the methodology reported in here can be easily extended to other RRAM systems, which will guide us to understand the origin nature of RS behaviors more clearly and optimize the performances of RRAM device with effective methods. |
| 其它备注: | 国外出版-外文 |
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