| 专著名称: | ICEPT&HDP 2012 |
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| 首席研究员: | |
| 主编单位: | ICEPT&HDP 2012 |
| 出版时间: | 2012-08-14 |
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| 编写人员: | 宋崇申 |
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| 著作性质: | 微电子学 |
| 编辑出版单位: | ICEPT&HDP 2012 |
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| 参编内容: | 铜TSV引入的热机械应力及其对衬底上器件性能的影响分析 |
| 著作简介: | 3D integration using TSVs is a promising method to achieve further improvements for future electronic systems. Stress is induced in silicon near the TSV by CTE mismatch between filling copper and Silicon substrate. When the substrate is an active one, this stress will influence the performance of the devices fabricated therein. To understand the induced stress and its impact on device performance deeply, this paper gives a comprehensive study. Orthotropic feature of silicon is considered to calculate the stress profile in silicon in vicinity of the Cu TSV. The saturation drain current variation of MOSFETs is calculated from the simulated stress data using piezoelectric effect theory. The results can well match the reported measuring data, giving an effective method to deeply understand the TSV induced stress and its impact on device performance. |
| 其它备注: | 国外出版-外文 |
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