论文--中国科学院微电子研究所

科研产出

当前位置 >>

论文

论文题目	作者	刊物名称	发表年度
The effect of nitridation and sulfur passivation for In (0.53)Ga (0.47)As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties	林子曾;	半导体学报	2016
卫星导航系统中的LDPC译码器设计	巴晓辉;	第五届中国卫星导航定位协会专家论坛	2016
一种基于点压技术的新型晶圆键合方法	许维;	焊接学报	2016
GPS/BDS卫星导航信号数字中频数据生成方法	巴晓辉;	第七届中国卫星导航学术年会	2016
An Asynchronous Wafer Bonding Method Using	许维;	IEEE	2016
100-nm gate-length enhancement mode InGaAs MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide	常虎东;	IEEE	2016
Ultralow temperature epitaxial growth of silicon-germanium thin films on Si(001) using GeF4	陶科;	Diamond and Related Materials	2016
Simulation study of an imulation study of an enhancement -mode n-type InGaAs MOSFETs with a low zero bias off-current	;	IEEE	2016
00-nm Gate-Length GaAs mHEMTs using Si-doped InP/InAlAs schottky layers and atomic layer deposition Al2O3 Passivation with fmax of 388.2 GHz	;	IEEE	2016
A Low Jitter Supply Regulated Charge Pump PLL with Self-calibration	陈敏;	Journal of Semiconductors	2016
Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells	李强;	Solar Energy	2016
A CMOS detection chip for amperometric sensors with chopper stabilized incremental delta-sigma ADC	陈敏;	Journal of Semiconductors	2016
A High Dynamic Range CMOS Readout Chip for Electrochemical Sensors	;	IEEE Sensors Journal	2016
Proper generalized decomposition method for parasitic capacitance extraction in integrated circuits	闫帅;	Proceedings	2016
Non-Conforming Mesh Gluing with Degenerated Generalized Barycentric Coordinates in Finite Elements Method	徐小宇;	The 7th International Conference on Electromagnetic Field Problems and Applications (ICEF 2016)	2016