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论文题目	作者	刊物名称	发表年度
The study of defect removal etching of black silicon	肖高; 刘邦武; 刘金虎	Materials Science in Semiconductor Processing	2014
AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell	仇洪波; 刘邦武	Chinese Physics B	2014
A mask-less scheme to generate nanohoneycomb textured structures for solar cells	刘杰; 刘邦武; 钟思华 ;刘金虎;夏洋;李超波	Chinese Science Bulletin	2014
光诱导液相沉积Ni/Cu应用于晶硅电池栅线的制备	宁婕妤; 刘邦武	功能材料	2014
Ultrafast carrier dynamics and optical properties of nanoporous silicon at terahertz frequencies	; 路鑫超	Opt. Mater. Express	2014
Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer	王鑫华;	IEEE TRANSACTIONS ON ELECTRON DEVICES	1949
Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method	杨旭; 王盛凯 ;孙兵;赵威;常虎东;曾振华;刘洪刚	Applied physics letters	2014
基于氧化钨的８Ｍｂ高密度阻变存储器设计	陈铖颖; 张锋; 范军; 胡晓宇	微电子学	2014
Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge	韩乐; 王盛凯 ;薛百清; 刘洪刚	Chinese Physics B	2014
HIGH PERFORMANCE GE-PMOSFET INTEGRATED ON SI PLATFORM	王盛凯; 杨旭; 龚著靖; 孙兵;赵威;常虎东;刘洪刚	Proceedings of ICSICT2014	2014
A COMPARATIVE STUDY OF Ge MOSFET USING Al2O3/GeOX/Ge STACKS –FORMING HIGH QUALITY GeOX INTERFACE LAYER TO BOOST DEVICE PERFORMANCE	杨旭; 王盛凯; 孙兵 ;赵威;常虎东;曾振华;刘洪刚	Proceedings of ICSICT2014	2014
An overview of the switching parameter variation of RRAM	张美芸; 龙世兵 ;王国明 ;孙鹏霄;孙海涛;刘琦;吕杭炳;刘明;李阳;许晓欣;刘红涛;刘若愚;王明;李丛飞	Chin. Sci. Bull.	2014
Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric	王盛凯; 杨旭 ;龚著靖; 孙兵;赵威;常虎东;刘洪刚	Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,	2014
A 55-dB SNDR,2.2-m W double chopper-stabilized analog front-end for a thermopile sensor	陈铖颖; 胡晓宇; 范军;黑勇	半导体学报	2014
A power reduction technique for wideband common gate low noise amplifers	王明华; 张明磊; 樊晓华; 刘昱	IEEE	2014