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论文题目	作者	刊物名称	发表年度
Self-Aligned Fin-On-Oxide (FOO) FinFETs for Improved SCE Immunity and Multi-VTH Operation on Si Substrate	马小龙; 洪培真;徐唯佳	ECS Solid State Letters	2015
Gate-All-Around Silicon Nanowire Transistors with Channel-Last Process on Bulk Si Substrate	马小龙; 洪培真	IEICE Electronics Express	2015
3D硅基探测器研究现状	杨君; 贾云丛;李贞杰	电子元件与材料	2015
单型掺杂柱电极的3D硅像素探测器的器件与制造工艺研究	明希; 孟令款;李俊杰;贾云丛;李贞杰;袁烽;刘鹏;陈大鹏	半导体光电	2015
Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low-pressure chemical vapor deposition SiNx/n-GaN MIS structures	马晓华; 黄森;高竹;包琦龙	Physics Status Solidi A	2015
A more reliable measurement method for metal/graphene contact resistance	王少青; 毛达诚;彭松昂;张大勇;史敬元;王选芸	Nanotechnology	2015
Atomic Layer Deposited TiAlC Film as Metal Gate for 22 nm Node CMOS Technology and Beyond	项金娟; 张严波;高建峰;李亭亭;殷华湘;李俊峰	ALD 2015	2015
Thickness optimization for lithography process on different silicon substrate	苏晓菁; 粟雅娟;刘艳松	Proc. of SPIE	2015
Focus Shift Impacted by Mask 3D And Comparison between Att. PSM and OMOG	刘艳松; 苏晓菁;董立松;宋之洋;郭沫然;粟雅娟	Proc. of SPIE	2015
Breakdown mechanism in AlGaN/GaN high electron mobility transistors with different GaN channel thickness	张亚嫚; 袁婷婷;庞磊;陈伟	Chinese Physics B	2015
Enlage the process window of patterns in 22nm node by using mask topography aware OPC and SMO	刘艳松; 苏晓菁;董立松;宋之洋;郭沫然;粟雅娟	CSTIC	2015
Thermal stability of Ni/Ti/Al ohmic contacts to p type 4H-SiC	于海龙; 张旭芳;吴煜东;刘可安;刘新宇	JOURNAL OF APPLIED PHYSICS	2015
Effects of defects and thermal treatment on the properties of graphene	贾昆鹏; 陈阳;罗军;杨杰;朱慧珑;赵超;叶甜春	VACUUM	2015
微纳机电开关研究现状	曹合适;	电子技术应用	2015
An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors	王弋宇; 吴佳;李诚瞻;韩林超;王文武;刘新宇	Materials Science Forum	2015