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论文题目	作者	刊物名称	发表年度
Efficiency enhancement of InGaN/GaN multiple quantum wells	邓震;	applied physics a-materials science & processing	2015
A Fast Positioning Method for Hot Start in GNSS Receiver	; 罗士栋;刘海洋;原青;王云;陈杰	China Satellite Navigation Conference (CSNC) 2015 Proceedings	2015
Comparative Study of AlGaN/GaN HEMTs with LPCVD- and PECVD-SiNx Passivation	;	International Conference on CompoundSemiconductor Manufacturing technology	1949
Investigation of TiAlC by Atomic Layer Deposition as N Type	项金娟; 李亭亭;张严波;王晓磊;高建峰;崔虎山;李俊峰;王文武	ECS Journal of Solid State Science and Technology	2015
Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation	王晓磊;	Applied Surface Science	2015
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs	; 徐烨锋;罗军;朱慧珑;赵超;陈大鹏;叶甜春;郭奕栾;秦长亮;唐兆云;殷华湘;李俊峰;闫江	Solid-State Electronics	2015
High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique	;	IEEE Electron Device Letters	2015
Overshoot Stress on Ultra-Thin HfO2？High-k ？Layer and Its Impact on Lifetime Extraction	万光星; 朱慧珑	IEEE ELECTRON DEVICE LETTERS	2015
RobustSiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer	;	IEEE Electron Device Letters	2015
碳膜保护对高温激活SiC 表面形貌的影响	; 王弋宇;史晶晶;申华军;周正东	电子器件	2014
Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment	;	IEEE Electron Device Letters	1949
FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application	魏星; 钟健;罗军;吴昊;赵超;尹海洲	Solid-state electronic	2015
High-Performance Enhancement-Mode Al？O？/AlGaN/GaN-on-Si MISFETs With 626 MW/cm2 Figure of Merit	;	IEEE Transaction on Electron Devices	2015
基于Sigma-Delta调制技术的片内正弦激励生成方法	彭智聪; 陈岚;冯燕;柳臻朝	微电子学与计算机	2017
Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blues MOCVD platform	包琦龙; 罗军;赵超	Journal of crystal growth	2015