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论文题目	作者	刊物名称	发表年度
Bulk FinFETs with body spacers for improving fin height variation	魏星;	Solid-State Electronics	2016
Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors	项金娟;	ECS Journal of Solid State Science and Technology	2016
Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks	项金娟;	ECS Journal of Solid State Science and Technology	2016
Microcontroller susceptibility variations to EFT burst during accelerated aging	;	Microelectronics Reliability	2016
Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors	项金娟;	ECS Journal of Solid State Science and Technology	2016
Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate	项金娟;	Solid-State Electronics	2016
Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate	陆江;	radiation effects on components & systems conference	2016
Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors	项金娟;	Chin. Phys. B	2016
Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films	陈文辉;	Thin Solid Films	2016
Analysis of multi-e-beam lithography for cutting layers at 7-nm node	赵利俊;	Journal of Micro/Nanolithography, MEMS, and MOEMS	2016
A Novel Nanofabrication Technique of Silicon-Based Nanostructures	孟令款;	Nanoscale Research Letters	2016
Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devicesLingkuan	孟令款;	Applied Surface Science	2016
Novel top-down fabrication of Si-based nanostructures with sub-20nm scale	孟令款;	IEEE 13th International Conference on Solid-State and Integrated Circuit Technology	2016
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer	罗维春;	Microelectronics Reliability	2016
Spin diffusion in disordered organic semiconductors	李泠;	Physical Review B	2016