| 论文题目 | 作者 | 刊物名称 | 发表年度 |
|---|---|---|---|
| 运用AlGaAs缓冲层在Si衬底上生长GaAs/AlGaAs异质纳米线 | 郭经纬; | Journal of Crystal Growth | 2013-01-06 |
| 利用AlN薄膜钝化在AlGaN/GaN功率HEMT上实现低动态导通电阻 | 陈敬; | ECS Transactions | 2013-03-01 |
| Low noise fully single-ended broadband receiver front-end with InGaAs pHEMT technology | 孙征宇; | IEEE MTT-S International Wireless Symposium | 2013-04-15 |
| 李含雁; | Electron Device Letters, IEEE | 2013-02-15 | |
| 冷永清; | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2013-04-01 | |
| 段宣明; | OPTICAL MATERIALS EXPRESS | 2013-09-17 | |
| 基于GaN HEMT的1.5～3.5GHz宽带平衡功率放大器设计 | 冷永清; | 电子学报 | 2013-04-01 |
| 基于PSS 刻蚀平台的真空微气压控制研究 | 林永奔; | 光电工程 | 2013-02-01 |
| 原子层沉积法 生长ZnO的性质与前驱体源量的关系研究 | 夏洋; | 物理学报 | 2013-04-08 |
| 吴利华; | 2013 IEEE S3S | 2013-10-07 | |
| 王文武; | Applied physics letters | 2013-10-28 | |
| 王桂磊; | ECS Transactions | 2013-11-03 | |
| 孙瑜; | 2013 IEEE 63rd Electronic Components and Technology Conference | 2013-05-28 | |
| Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier | 刘新宇; | Applied Physics Express | 2013-06-01 |
| Ku-band high power internally matched GaN HEMTs with 1.5GHz bandwidth | 刘新宇; | Microelectronics International | 2013-01-01 |
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