当前位置 >>  首页 >> 科研工作 >> 科研动态

科研动态

王彬博士应邀来我所进行学术交流

稿件来源: 发布时间:2009-05-31

  2009年4月17日,应三室刘明主任的邀请,Spansion公司前高级技术研究员王彬博士来我所进行学术交流。

  上午在我所109会议室给广大师生做了“Low-cost Embedded CMOS Compatible Non-Volatile Memories and RFID”的精彩报告,并与同学老师们进行了详细深入的交流和讨论。基于标准逻辑工艺的非挥发存储器(LNVM)具有低成本、无需增加额外的工艺的优势,广泛应用于SOC、射频识别(RFID)标签、HDMI加密技术、Flash数字控制器等。王彬博士分四部分对LNVM的技术、应用、产品开发、以及LNVM对低成本RFID标签的推动作用等方面进行了详细的综述报告,并在报告过程中随时回答大家的提问。

  下午在三室703会议室王彬博士与三室存储器小组相关人员就我所存储器方向的发展展开了深入的讨论,王彬博士根据自身十多年的存储器研发经验对三室存储器在材料、器件、模型、集成、可靠性等方面提供了很好的建议,对适合于研究所开展的研究工作提出了自己的意见,对三室存储器的发展具有很好的借鉴意义,双方还对今后可能会开展的紧密合作进行了深入探讨。

  王彬博士1996年毕业于北京清华大学工程物理系,在2001年取得马里兰大学(University of Maryland College Park)微电子可靠性工程博士学位。他拥有10年以上的半导体嵌入式电子存储器,闪存以及无线射频识别(RFID)的美国工业界及研究所的技术开发,工程管理和业务开发的经验。他发表了24篇需同行审稿的杂志和会议文章,有10个发表和出版的美国专利。他曾是Spansion(飞索)硅谷总公司高级存储研发中心的32纳米NAND闪存器件及工艺研发的高级技术研究员。曾担任Virage Logic公司和Impinj公司的工程经理,并在隶属于美国贸易部的美国国家标准化技术局做过3年的客座研究员。在Impinj时,他负责了从零开始的产品器件工艺和设计,管理和认证了该公司的前四个非挥发性存储器( NVM )产品一直到产品的顾客端的量产。他而且负责协调内部产品开发,客户和代工伙伴关系,并且负责存储器知识产权产品的代工厂业务开发,质量保证和售后客户技术支持。他曾是Integrated Reliability Workshop 和 International Reliability Physics Symposium的评审委员会一员,并担任过IEEE Electron Device Letter and Transaction on Electron Devices的审稿人。他参加过在University of Washington, Bothell的工商管理硕士 (MBA)的学习,并曾就读于中国科学院高能物理研究所。                                               

  Dr. Wang earned his Ph.D. in Microelectronics Reliability Engineering from University of Maryland (01’), and a B.S. in Engineering Physics from Tsinghua University (96’), Beijing. He has over 10 years technology development, engineering and management experience in semiconductor embedded electronic memory, Flash and Radio-Frequency Identification (RFID) industry and research institute. He has authored 24 peer-reviewed journal and conference articles, has 10 issued and published US patents. He has worked as a Senior Staff Engineer at Spansion LLC., as an Engineering Manager both at Virage Logic and Impinj Inc., as a guest researcher at National Institute of Standards of Technology, Department of Commerce, USA. While at Impinj, he managed and qualified the company’s first four non-volatile memory (NVM) products starting from scratch. He coordinated the product development with customers and foundry partners and also held responsibilities in foundry interface, quality assurance and post-sale customer support for the NVM intellectual property products. He served in the Integrated Reliability Workshop and International Reliability Physics Symposium committee and reviewed papers for IEEE Electron Device Letter and Transaction on Electron Devices. He attended MBA program at University of Washington, Bothell and studied at Institute of High Energy Physics respectively in 2005 and 1996.

附件: