当前位置 首页 人才队伍
  • 姓名: 李博
  • 性别: 男
  • 职称: 研究员
  • 职务: 
  • 学历: 博士
  • 电话: 010-82995750
  • 传真: 010-82995836
  • 电子邮件: libo3@ime.ac.cn
  • 所属部门: 硅器件与集成研发中心
  • 通讯地址: 北京市朝阳区北土城西路3号

    简  历:

  • 教育背景: 

    20088月–20125月,法国里昂国立应用科学院,电力电子学与微电子学,博士 

    20059月–20081月,北京交通大学,微电子学与固体电子学,硕士 

    20019月–20057月,北京交通大学,电子工程系,本科 

    工作简历: 

    2020年7月-至今,中国科学院微电子研究所,硅器件与集成研发中心,中国科学院硅器件技术重点实验室,研究员

    20161-2020年6月,中国科学院微电子研究所,硅器件与集成研发中心,中国科学院硅器件技术重点实验室,项目研究员,副研究员,课题组长,研究生辅导员,支部青年委员 

    20166-20169月,法国国家科学院,法国里昂国立应用科学院,期间访问学者 

    201210-20161月,中国科学院微电子研究所,硅器件与集成研发中心,助理研究员 

    社会任职:

  • 中国科学院硅器件技术重点实验室,学术秘书 

    中国科学院青年创新促进会,会员 

    《现代应用物理》,青年编委 

    国家自然科学基金,评议人 

    中国核学会辐射物理分会,会员 

    全国微电子研究生学术论坛技术委员会,委员 

    IEEE Member 

    20余本国内外高水平期刊审稿人 

    研究方向:

  • 半导体器件和电路

    承担科研项目情况:

  • 1. 国家自然科学基金面上项目,61874135,堆叠纳米线围栅器件的辐射损伤机理及在线增强自修复机制研究,2019-012022-1266万元,在研,主持 

    2. 国家自然科学基金委员会与俄罗斯基础研究基金会合作交流项目,62011530040,纳米级半导体器件的综合辐射效应研究,2020-012021-1214.46万元,在研,主持 

    3. 中国科学院特别交流计划项目,新型半导体器件的综合辐射效应研究,2019-122021-1210万元,在研,主持  

    4. 中国科学院微电子所所长基金,新一代材料与器件,2019-012019-12150万元,已结题,主持 

    5. 中国科学院青年创新促进会会员,20161132016-012019-1280万元,已结题,主持 

    6. 中国科学院基础前沿科学研究计划从01原始创新项目,ZDBS-LY-JSC015,晶圆级单晶二维层状半导体材料制备及相关高性能异质结构器件集成,2019-092024-08300万元,在研,参与 

    7. 国家自然科学基金委员会中德科学中心项目,GZ1598,工业工程中的不确定性量化问题,2019-12,已结题,参与 

    8. 中国国家留学基金委,中法“蔡元培”交流合作项目,2014-012016-1210万元,已结题,参与 

    代表论著:

  • 期刊论文 

    1. 张峰源, 李博, 刘凡宇, et al. FinFET 器件总剂量效应研究进展[J]. 微电子学, 2020.   

    2. 张峰源, 刘凡宇, 李博, et al. 考虑背栅偏置的FOI FinFET 电流模型[J]. 半导体技术, 2020.   

    3. Lu, B.; Li, B.*; Huo, J.; Chen, Y.; Zhao, W.; Gao, J.; Wang, C.; Liu, H.; Luo, J. & Zhou, Y. Design and Characterizations of the Radiation-Hardened XCR4C ASIC for X-ray CCDs for Space Astronomical Applications, IEEE Transactions on Nuclear Science, 2020, 1-1, Accepted.   

    4. Yu-Dong Li, Qing-Zhu Zhang, Fan-Yu Liu*, Zhao-Hao Zhang, Feng-Yuan Zhang, Hong-Bin Zhao, Bo Li*, Jiang Yan, X-ray irradiation induced degradation in Hf0.5Zr0.5O2 FDSOI nMOSFETs, RARE METALS, 2020, Accepted.  

    5. Wang, L., Liu, N., Li, B.*, et al. Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, IEEE Transactions on Nuclear Science, 2020, 1-1, Accepted.   

    6. Lei Wang, Bo Li*, et al, Mechanism Analysis of Proton Irradiation Induced Increase of 3dB Bandwidth of GaN-based Micro Light Emitting Diodes for Space Light Communication, IEEE Transactions on Nuclear Science, 2020,1-1, Accepted.   

    7. 王磊,李博,张学文,李彬鸿,郑中山,崔岩,罗家俊,韩郑生,刘新宇,袁清习,X射线和重离子辐射对GaN基发光二极管光学特性的影响,微处理机06-0001-051002-22792019.   

    8. Ningyang Liu, Qiao Wang, Bo Li, et al, Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, The Journal of Physical Chemistry C, 2019 123 (14), 8865-8870.   

    9. Li, Q., Li, B., Wang, L.*, Zheng, Z., Zhang, B.*, Liu, N.*, ... & Chen, Z. (2019). Comparison of 10 MeV Electron Beam Radiation Effect on InGaN/GaN and GaN/AlGaN Multiple Quantum Wells. Journal of Luminescence. 210, 2019, 169-174.   

    10. Zhang, G., Yang, J., Jiang, P., Bu, J., Li, B., & Li, B. (2018). Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs. Japanese Journal of Applied Physics, 57(10), 104201.  

    11. Jing Zhang, Xi Chen, Lei Wang, Zhongshan Zheng*, Huiping Zhu*, Bo Li*, Jinatou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions[J]. Journal of Applied Physics, 2019, 125(11): 115701.  

    12. Zhu, H. P., Zheng, Z. S.*, Li, B.*, Li, B. H., Zhang, G. P., Li, D. L., ... & Luo, J. J. (2018). Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation. Semiconductor Science and Technology, 33(11), 115010.   

    13. B. Li*, Y.-B. Huang, L. Yang, Q.-Z. Zhang, Z.-S. Zheng, B.-H. Li, H.-P. Zhu, J.-H. Bu, H.-X. Yin, J.-J. Luo, Z.-S. Han, H.-B. Wang, Process variation dependence of total ionizing dose effects in bulk nFinFETs, Microelectronics Reliability, 88–90, 2018, 946-951.   

    14. B. Li, Y. Huang, J. Wu*, Y. Huang, B. Li, Q. Zhang, L. Yang, F. Wan, J. Luo, Z. Han, H. Yin, Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, Microelectronics Reliability, 88–90, 2018, 969-973.   

    15. 黄云波, 李博, 杨玲, 韩郑生, 罗家俊, 极端低温下SiGe HBT器件研究进展, 微电子学, 2017.10.20, (05): 695~700.  

    16. Huang, Y.*; Li, B.*; Zhao, X.; Zheng, Z.; Gao, J.; Zhang, G.; Li, B.*; Zhang, G.; Tang, K.; Han, Z. & Luo, J.*, An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure, IEEE Transactions on Nuclear Science, 2018, 65, 1532-1539.   

    17. Yang, L.*; Zhang, Q.; Huang, Y.; Zheng, Z.*; Li, B.*; Li, B.; Zhang, X.; Zhu, H.; Yin, H.*; Guo, Q.; Luo, J. & Han, Z., Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation, IEEE Transactions on Nuclear Science, 2018, 65, 1503-1510.   

    18. Wang, L.*; Liu, N.; Song, L.; Li, B.*; Liu, Y.*; Cui, Y.; Li, B.; Zheng, Z.; Chen,* Z.; Gong, Z.; Zhao, W.; Cao, X.; Wang, B.; Luo, J. & Han, Z., Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes, IEEE Transactions on Nuclear Science, 2018, 65, 2784-2792.   

    19. Xiu, L., Zhang, W., Li, B.*, & Sun, Y. (2018). A digital dual-modulation control for single-phase UPS inverters. International Journal of Electronics, 105(11), 1900-1915.   

    20. Cui, Y., Zhu, H., Wang, L., Li, B., Han, Z., & Luo, J.* (2018). A new type of magnetism-controllable Mn-based single-molecule magnet. Journal of Magnetism and Magnetic Materials, 458, 90-94.   

    21. Cui Yan, Yang Ling, Gao Teng, Li Bo, Luo Jia-Jun. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices. Chinese Physics B, 2017, 26(8): 087501.   

    22. Bingqing Xie, Bo Li, Jinshun Bi, Jianhui Bu, Chi Wu, Binhong Li, Zhengsheng Han, Jiajun Luo. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices. Chinese Physics B,, 2016, 25(7):078501. 

    23. J. W. Zhang, C. Yin, C. Song, R. Liu and Bo Li*, Numerical simulation and experiments on mono-polar negative corona discharge applied in nanocomposites, IEEE Transactions on Dielectrics and Electrical Insulation, 2017, 24(2): 791-797.  

    24. 王典,李博,赵宇红,李彬鸿,罗家俊,林雪芳,阿拉·布鲁诺,应用于Buck电路的滑模算法研究,微电子学201747(04)557-561.  

    25.王典,李博*,赵宇红,李彬鸿,罗家俊,林雪芳,阿拉·布鲁诺,应用于Buck电路的滑模算法研究,微电子学201747(04)557-561.  

    26. Limei Xiu, Weiping Zhang, Bo Li*, and Yuansheng Liu, Digital Controller Candidate for Point-of-load Synchronous Buck Converter in Tri-mode Mechanism, Journal of Power Electronics, vol.14, no.4, 796-805, 2014.   

    27. 解冰清,毕津顺,李博,罗家俊,极端低温下硅基器件和电路特性研究进展,微电子学2015.  

    28.鲍进华,李博,曾传滨,高林春,毕津顺,刘海南,罗家俊,锁相环敏感模块的单粒子效应与设计加固[J]半导体技术201507547-553.   

    29. 鲍进华,吕荫学,李博,曾传滨,毕津顺,罗家俊,一种基于标准CMOS工艺实现的锁相环电路[J]电子设计工程2015.   

    30. Bo Li, Xuefang Lin-Shi, Allard, B., Retif, J.-M., A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Sigma-Delta DPWM, IEEE Transactions on Industrial Informatics, vol.8, no.3, 472-481, 2012.   

    31. Bo Li, Xuefang Lin-Shi, Bruno Allard, Low Power Digital Alternative to Analog Control of Step-Down Converter, Journal of Low Power Electronics, vol.8, no.5, 654-666, 2012.  

    会议论文 

    1. Xiaoting Shan, Yun Sun, Meng Xun, Jie Liu, Fazhan Zhao, Bo Li*, Lei Wang, et al, Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers, NSREC2020.  

    2. Junjun Zhang, Fanyu Liu, Bo Li*, Binhong Li, Yang Huang, Can Yang, Guoqing Wang, Rongwei Wang, Jiajun Luo and Zhengsheng Han, Temperature dependence of single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology, ESREF 2020.   

    3. Zhian WANG, Binhong LI, Jianfei WU, Wenxin ZHAO, Bo LI, Hainan LIU, Jiajun LUO, Tianchun YE, Study on electromagnetic susceptibility of current reference circuits with different feature sizes and structures, ESREF 2020.  

    4. GQ. Wang, FY. Liu, B. Li*, Y. Huang, YC. CN. Wu, JM. Zhang, JJ. Luo, ZS. Han, S. Cristoloveanu, Revisited parasitic bipolar effect in FDSOI MOSFETs: mechanism, gain extraction and circuit applications, Euro-SOI 2020.  

    5. X. Zhang, FY. Liu, B. Li*, JJ. Luo, ZS. Han, M. Arsalan, J. Wan, S. Cristoloveanu, Pseudo-MOSFET transient behavior: experiments, model and substrate effect, Euro-SOI 2020.   

    6. Wang, L., Li, B.*, Wang, J., Guan, X., Zhang, X., Liu, N., Gong, Z., Wei, Z., Zhu, H., Liu, N., Li, B., Gao, J., Huang, Y.; Liu, M., Yang, J., Li, X., Luo, J., Han, Z, Liu, X., Proton Irradiation Effects on the Static and Dynamic Characteristics of GaN-based Blue Light Emitting Diodes for Space Light Communication, Radiation and its Effects on Components and Systems (RADECS), 2019, France.  

    7. Wang, L., Li, B.*, Zhang, X., Liu, N., Yuan, Q., Liu, N., Liu, M., Li, B., Gao, J., Huang, Y., Yang, J., Li, X., Luo, J., Han, Z, Liu, X., Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, Radiation and its Effects on Components and Systems (RADECS), 2019, France.   

    8. Li, B., Lu, B., Jia, H., Chen, Y., Wei, W., Zhang, F., Su, Z., Gao, J., Wang, C., Zhao, W., Liu, H., Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events, Radiation and its Effects on Components and Systems (RADECS), 2019, France.   

    9. Xiong, G., Qin, Z., Zhu, H., Zhao, S., Wang, L., Li, B.*, Zhang, X., Zheng, Z., Gao J., Yang J., Li X., Li B., Huang, Y., Luo, J., Han, Z., Liu, X., Mechanism of transient inverse pulse current in hybrid perovskite photodetector induced by proton beam irradiation, Radiation and its Effects on Components and Systems (RADECS), 2019, France.   

    10. Zhu, H., Wang, L., Shi, J., Huang, X., Zheng, Z., Xiong, G., Li, B.*, Gao, Q., Yang, B., Luo, J., Han, Z., Liu, X., Impact of High-Energy Proton Irradiation on MoS2 Films and Its Field Effect Transistors, Radiation and its Effects on Components and Systems (RADECS), 2019, France.   

    11. Huang, Y., Liu, F., Li, B., Li, B.*, Gao, J., Wang, L., Su, X., Liu, H., Han, Z., Luo, J., Radiation-induced Degradation Mechanism in Double-SOI pMOSFETs, Radiation and its Effects on Components and Systems (RADECS), 2019, France. 

    12. Zheng, Z. S., Zhu, H. P., Chen, X., Wang, L., Li, B.*, Gao, J. T., Li, D. L., Luo, J. J., Han, Z. S., Liu, X. Y.  Liu J., Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited Al2O3 Gate Dielectrics, Radiation and its Effects on Components and Systems (RADECS), 2019, France.   

    13. Xiaohui Su, Bo Li*, Hainan Liu, Binhong Li, Lei Wang, Jiajun Luo, Zhengsheng Han, An SET Generation Circuit with Tunable Pulse Width, EDSSC 2019, Xi'an.   

    14. Xiaohui Su, Ming He, Mengxin Liu, Bo Li*, Hainan Liu, Binhong Li, Jiajun Luo, Zhengsheng Han*, An SET Pulse Widths Measurement Circuit with the Controllable Bilateral Edge Delay, ICREED 2019, Chongqing.   

    15. Li Duoli, Yu Meng, Zeng Chuanbin, Gao Linchun, Yan Weiwei, Li Bo*, et al, A Probabilistic Analysis Technique for Single Event Transient Sensitivity Evaluation of Phase-Lock-Loops, ESREF2019, France.   

    16. Fengyuan Zhang, Bo Li*, Qingzhu Zhang*, Binhong Li, Lei Wang, Yang Huang, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Impact of Total Ionizing Dose on the Threshold Voltage of FOI FinFET with a Property of Tunable Interface Defects, NSREC 2019, San Antonio, Texas, US, July 08-12, 2019.   

    17. Xuewen Zhang, Lei Wang, Bo Li*, Chunjun Liang, Huimin Zhang, Chao Ji, Fulin Sun, Jianqun Yang, Xinji Li, Jiantou Gao, Binhong Li, Mengxin Liu, Yang Huang, Jiajun Luo, Zhengsheng Han, Xinyu Liu, Proton irradiation effect on high efficient organic-inorganic metal halide perovskite solar cell, NSREC 2019, San Antonio, Texas, US, July 08-12, 2019.   

    18. Mei Bo, Yu Qingkui, Zhang Hongwei, Tang Min, Zhao Xing, Li Bo, Zeng Chuanbin, Experimental study of single event transient characteristics on PDSOI CMOS inverter chain by pulse laser irradiation. RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.   

    19. Lei Wang, Qingxuan Li, Ningyang Liu, Ligang Song, Bo Li, Binhong Li, Mengxin Liu, Yang Huang, Baoping, Zhang, Zhitao Chen, Xingzhong Cao, Baoyi Wang, Bo Mei, Comparison of 10 Mev Electron Beam Irradiation Effect on InGaN/GaN and AlGaN/GaN Multiple Quantum Well, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.  

    20. Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Mei Bo, Chuanbin Zeng, Zhengsheng Han, Jiajun Luo, Radiation and Annealing Characteristics of Interface traps in SOI NMOSFETs by the Direct-Current Current-Voltage Technique, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.   

    21. Li Huang, Tianyang Zhang, Bo Li, Yu Zhang, Yuhong Zhao, Houfang Liu, Yan Cui, Xiufeng Han, The total ionizing dose effect of magnetometers system based on tunneling magnetoresistance sensor, RADECS2018, Gothenburg, Sweden, 16-21, Sept. 2018.  

    22. 李博,黄云波,杨玲,郝乐,罗家俊,韩郑生,堆叠纳米线围栅器件的辐射与自加热协同效应仿真研究,第三届全国辐射物理学术交流会CRPS2018.    

    23. Bo Li, Shuo Guo, Le Hao, Jinshun Bi, Jiajun Luo, Zhengsheng Han, The dependence of single event effect on heavy ion angular irradiation by Geant4 simulation, RADECS Workshop 2018, Beijing, 2018.05.16-18.   

    24. Jiantou Gao, Binhong Li, Huang Yang, Bo Li, Fazhan Zhao, Chunlin Wang, Zhihang An, Zejun Cheng, Zhengsheng Han, Jiajun Luo, Gang Guo, Jie Liu, Back gate impact on SEU Characterization of a Double SOI 4k-bit SRAM, 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), Hawaii, US, 2018.07.16-20.  

    25. B. Lu, J. Huo, Y. Chen, B. Li, H. N. Liu, J. J. Luo and Y. M. Zhou, XCR4C: A rad-hard full-function CDS ASIC for X-ray CCD Applications, IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC 2018, Sydney, Australia, 2018.11.10-17.   

    26. Bo Li, Qingzhu Zhang, Ling Yang, Yunbo Huang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Mengxin Liu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han and Haibin Wang, Process variation dependence of total ionizing dose effects in bulk nFinFETs, ESREF 2018, Aalborg, Denmark, 2018.10.1-5.   

    27. Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han and Huaxiang Yin, Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, ESREF 2018, Aalborg, Denmark, 2018.10.1-5.  

    28. Ling Yang, Yunbo Huang, Zhongshan Zheng, Bo Li, Binhong Li, Qingzhu Zhang, Xingyao Zhang, Huiping Zhu, Huaxiang Yin, Qi Guo, Jiajun Luo, Zhengsheng Han, Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs, 2017 Conference on Radiation and its Effects on Components and Systems, Geneva, 2017.10.2-2017.10.6   

    29. Yang Huang, Binhong Li, Xing Zhao, Zhongshan Zheng, Jiantou Gao, Gang Zhang, Bo Li, Guohe Zhang, Kai Tang, Zhengsheng Han , Jiajun Luo, An Effective Method to Compensate TID Induced Degradation on DSOI Structure, 2017 Conference on Radiation and its Effects on Components and Systems, Geneva, 2017.10.2-2017.10.6   

    30. Dian Wang, Yu-Hong Zhao, Bo Li, Bin-Hong Li and Jia-Jun Luo, The current observer design for buck converter, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 768-770.   

    31. Dian Wang, Yu-Hong Zhao, Bo Li*, Bin-Hong Li and Jia-Jun Luo, The current observer design for buck converter, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 768-770.  

    32. Bo Li, Jinshun Bi, Zhengsheng Han, Jiajun Luo, Xuefang Lin-Shi, Bruno Allard, Li Chen, A Digital Direct Controller for Buck Converter, ICSICT2014, Guilin, 2014.10.28-11.1.   

    33. Xuefang Lin-Shi, Bruno Allard, Jinshun Bi, Bo Li*, Stability Analysis for Integrated DC/DC Converters, ICSICT2014, Guilin, 2014.10.28-11.1. 

    34. Jinshun Bi, Bo Li, Zhengsheng Han, Jiajun Luo, Li Chen, Xuefang Lin-Shi, 3D TCAD Simulation of Single-event-effect in N-channel Transistor Based on Deep Sub-micron Fully-depleted Silicon-on-insulator Technology,ICSICT2014, Guilin, 2014.10.28-11.1. 

      35. Xie Bingqing, Luo Jiajun, Li Bo, Bi Jinshun, Bu Jianhui, Zhao Xing, Li Binhong, and Han Zhengsheng, The Effect of Cryogenic Temperature Characteristics on 0.18um Silicon-on-insulator Devices, ICREED2015, Harbin, 2015.   

    36. 郝乐,李博*,毕津顺,罗家俊,韩郑生,CMOS电路中的单粒子瞬变效应,ICREED2015,哈尔滨,2015.   

    37. Li Bo, Bi Jinshun, Luo Jia-Jun, Han Zheng-Sheng, Lin-Shi Xue-Fang, Allard Bruno, An SEE Prognostic Cell Embedded Rad-hard Digital Controller for Next Generation DC-DC Converter in Space, ICREED2015, Harbin, 2015. 

    38. Bo Li, Xuefang Lin-Shi, Allard, B., Retif, J.-M., An FPGA Prototype of Current and Voltage Predictive Controller for High Switching Frequency Buck Converter, IECON 2012, 3024-3029, Montreal, 2012.10.25-28.   

    39. Bo Li, Shuibao Guo, Xuefang Lin-Shi, and Allard, B., MASH Δ-Σ DPWM Based Sliding-mode Controller Dedicating to High Frequency SMPS, EPE 2011, 1-9, Birmingham, 2011.08.30-09.1. 

    40. Bo Li, Shuibao Guo, Xuefang Lin-Shi, and Allard, B., Design and Implementation of the Digital Controller for Boost Converter based on FPGA, ISIE2011, 1549-1554, Gdansk, 2011.06.27-30. 

    41. Shuibao Guo, Xuefang Lin-Shi, Allard, B., Bo Li, Yanxia Gao, and Yi Ruan, High Resolution Digital PWM Controller for High-frequency Low-power SMPS, EPE 2009, 1-9, Barcelona, 2009.09.8-10. 

    42. Shuibao Guo, Xuefang Lin-Shi, Allard, B., Bo Li, Yanxia Gao, and Yi Ruan, A FPGA-prototype of a Sliding-mode-controller IC for High-switching-frequency DC-DC Converters, IECON 2009, 2895-2900, Porto, 2009.11.3-5. 

    专利申请:

  • 1. 宿晓慧,李博,李彬鸿,黄杨,李多力,卜建辉,韩郑生,罗家俊,一种SOI器件结构及其制备方法,201910011391.X 

    2. 宿晓慧,李博,李彬鸿,黄杨,李多力,卜建辉,韩郑生,罗家俊,一种SOI器件结构及其制备方法,201910011406.2 

    3. 宿晓慧,李博,李彬鸿,黄杨,李多力,卜建辉,韩郑生,罗家俊,一种SOI器件结构及其制备方法,201910011393.9 

    4. 徐子轩,李博,刘海南,罗家俊,带隙基准电压产生装置,201711138757.7 

    5. 徐子轩,李博,赵博华,刘海南,罗家俊,一种抗辐射带隙基准电路的加固方法,201711137437.X 

    6. 王磊,李博,赵发展,韩郑生,罗家俊,刘新宇,一种单光子光源的制备方法及元器件,201811423197.4 

    获奖及荣誉:

  • 2019年,微电子研究所十佳先进工作者,优秀共产党员,研究生喜爱的导师 

    2018年,微电子研究所优秀共产党员,研究生喜爱的导师 

    2014年,微电子研究所第二届“科研新星”一等奖