教育背景：

2018-2021 中国科学院微电子研究所，微电子学与固体电子学，工学博士 

2004-2007 北京航空航天大学，材料科学与工程，工学硕士 

2000-2004 武汉理工大学，材料科学与工程，工学学士

 1，Jun jie Li,Wenwu Wang,Yongliang Li et al., Study of selective isotropic etching Si_1？xGe_x in process of nanowire transistors. J. Mater. Sci. Mater. Electron. 2020, 31, 134–143

2，Jun jie Li, Yongliang Li,Guilei Wang, Wenwu Wang et al., A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm. Materials 2020, 13, 771 

3. Jun jie Li, Yongliang Li,Guilei Wang, Wenwu Wang et al., Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-transistors. Nanomaterials 2020, 10, 1–11 

4.Ziyi Hu. Jun jie Li*, et al.,First large-scale (68×25×5 nm3 ) atomistic modeling for accurate and efficient etching process based on machine learning molecular dynamics (MLMD).IEDM 2024

5.Zhen jie Yao,Junjie Li*, et al.,Etching process prediction based on cascade recurrent neural network.Engineering Applications of Artificial Intelligence139(2025)109590

6.Hua Shao,Junjie Li*,et al.,Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors.ACS Applied Electronic Materials2024 6 (11), 8124-8133

7. Jianyu Fu,Junjie Li et al., Improving sidewall roughness by combined RIE-Bosch process. Materials Science in Semiconductor Processing 83 (2018) 186–191 

8.Enxu Liu,Junjie Li*, et al.,Study of Selective Dry etching Si0.7Ge0.3 with Different Plasma Source in Process of Gate-all-around FET.SPIE 2024 oral

9.Ziyi Hu,Junjie Li, et al.,A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing. Small 2024, 2405574

10.Chaoran Yang,Junjie Li*, et al.,Study of Inner Spacer Module Process for Gate All Around FieldEffect Transistors.ECS Journal of Solid State Science and Technology, 2024 13 085001