1. 国家自然科学基金，2024.01-2027.12，48万，项目负责人

2. 北京市自然科学基金，2023.11-2026.12，100万，项目负责人

3. 校企产研项目，2023.04-2024.10，150万，项目负责人

4. 地方企业项目，2023.01-2025.12，1438万，项目负责人 

5. 高技术项目，2020.08-2023.08，220万，项目负责人 

6. 国家自然科学基金，2014.01-2016.12，30万，项目负责人

1. Jiao Chen, Zhicheng Wang, Hong Yang* et.al, Asymmetrical Source/Drain Induced Localized Hot-Carrier Degradation and Parasitic PBTI in n-Type Vertical Nanosheet FET, in IEEE Transactions on Electron Devices, vol. 73, no. 4, pp. 2367-2372, April 2026.

2. Mingyang Sun, Yunfei Shi, Hong Yang* et.al, Lateral Sensing of Hot-Carrier-Induced Trap Distribution via DIBL Degradation Analysis in Nanoscale n-FinFET, in IEEE Transactions on Electron Devices, vol. 73, no. 1, pp. 104-109, Jan. 2026.

3. Liang Xiang, Gangping Yan, Hong Yang* et.al, New Insights Into Low-Temperature Thermal Stability and PBTI in Back-Gated IGZO/HfO2 Transistors Related to Oxygen Migration, in IEEE Electron Device Letters, vol. 47, no. 4, pp. 760-763, April 2026.

4. Yi Huangfu, Junjie Li, Hong Yang* et.al, TDDB Lifetime Enhancement in HfO2/TiAlC Gate Stacks by Low-Temperature (250℃) Remote Plasma Oxygen Treatment, IEEE International Reliability Physics Symposium (IRPS), Tucson, AZ, USA, 2026, pp. 1-5.

5. Songyi Jiang, Junjie Li, Hong Yang* et.al, NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment, IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2025, pp. P56.PI-1-P56.PI-5.

6. Liang Xiang, Gangping Yan, Hong Yang* et.al, Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors, IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2025, pp. 1-5.

7. Mingyang Sun, Yunfei Shi, Hong Yang* et.al, Impact of Titanium Nitride (TiN) Thickness Uniformity on the Reliability of n-FinFETs: A Comparative Study of ALD and PVD TiN Techniques, IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong Kong, 2025, pp. 1-3.

8. Songyi Jiang, Qianqian Liu, Hong Yang* et.al, Enhanced NBTI Characteristics in HfO2/TiAlC RMG Stacks via Low-Temperature H* Remote Plasma Treatment After Interfacial Layer Growth, IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong Kong, 2025, pp. 1-3.

9. Yunfei Shi, Songyi Jiang, Hong Yang* et.al, Improved Positive Bias Temperature Instability of n-type Vertical C-Shaped-Channel Nanosheet FET by Forming Gas Annealing, Microelectronic Engineering, vol.299, 15 September 2025.

10. Hao Chang, Qianqian Liu, Hong Yang* et.al, Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs using Gate Induced Drain Leakage, IEEE Electron Device Letters, 2023,44(3): 372-375.

11. Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Recovery Behavior of Interface Traps after Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique, IEEE Transactions on Electrons Devices, vol. 68, No. 9, pp. 4251-4258, Sep. 2021.

12. Longda Zhou, Zhaohao Zhang, Hong Yang* et.al, A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs, in IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021.

13. Hao Chang, Longda Zhou, Hong Yang*, et.al, Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs, in IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021.

14. Longda Zhou, Qianqian Liu, Hong Yang* et.al, Insights into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs, IEEE Trans. Device Mater. Rel., vol. 20, no. 3, pp. 498-505, Sept. 2020.

15. Longda Zhou, Bo Tang, Zhigang Ji, Hong Yang* et.al, An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method, IEEE Trans. Device Mater. Rel., vol. 20, no. 1, pp. 92-96, Mar. 2020.

16. Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si p-FinFETs, IEEE Electron Device Letters, pp.965-968, vol.41, issues7, July 2020.

17. Hong Yang, Weichun Luo, Longda Zhou et.al, Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs, IEEE Electron Device Letters, p.1129-1132, vol.39, issue 8, Aug. 2018.

18. Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs, IEEE International Reliability Physics Symposium (IRPS), April 2020.

已授权专利：

1.杨红等，美国专利，授权号：US9831089 B2 

2.杨红等，美国专利，授权号：US8921171.B2 

3.杨红等，中国专利，授权号：ZL2024117663693

4.杨红等，中国专利，授权号：ZL201510661889.2 

5.杨红等，中国专利，授权号：ZL201310331607.3 

6.杨红等，中国专利，授权号：ZL201310160772.7 

7.杨红等，中国专利，授权号：ZL201210246582.2 

8.杨红等，中国专利，授权号：ZL201210246572.9