铪基铁电闪存器件及集成技术研究

Researchgate链接：

https://www.researchgate.net/profile/Jun-Shuai-Chai-2?ev=hdr_xprf

[1] Runhao Han, Jia Yang, Tao Hu, Mingkai Bai, Yajing Ding1, Xianzhou Shao, Wenliang Liu*, Junshuai Chai*, Hao Xu*, Xiaolei Wang, Wenwu Wang and Tianchun Ye, Gate/Channel Interface Co-design for Highly Reliable 3D FE NAND, 2026 IEEE International Reliability Physics Symposium (IRPS)

[2] Runhao Han, Tao Hu, Jia Yang, Saifei Dai, Yajing Ding, Mingkai Bai, Xianzhou Shao*, Junshuai Chai*, Hao Xu, Qing Luo, Wenwu Wang, Tianchun Ye, Xiaolei Wang, Unveiling Retention Loss Mechanism in FeFETs With Gate-Side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization, IEEE Transactions on Electron Devices, vol. 73, pp. 3580-3586 (2026)

[3] H. Run, J. Chai*, T. Hu, J. Yang, T. Luo, X. Shao, M. Liao*, X. Sun, Y. Du, W. Liu*, K. Han, H. Xu, Q. Luo, X. Wang, W. Wang, T. Ye, " Interlayer Co-Design Enabling a Large Memory Window and Robust Reliability in Ferroelectric Vertical Gate-All-Around FETs," IEEE Electron Device Letters, Early Access (2026)

[4] H. Xu, S. Dai, X. Shao, M. Liao, Z. Chen, T. Hu, R. Han, J. Yang, Y. Ding, Y. Zhao, P. Jia, X. Sun, J. Chai, X. Wang, W. Wang, "The V_th shift mechanism in MIFIS FeFET: A field-driven perspective," Applied Physics Letters, vol. 127, pp. 162901 (2025)

[5] X. Shao, J. Chai*, F. Tian, X. Ke, M. Liao, S. Dai, H. Fan, X. Sun, H. Xu, K. Han, J. Xiang, X. Wang*, J. Zhang, W. Wang, and T. Ye, "Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si Gate-Stacks," IEEE Transactions on Electron Devices, vol. 71, pp. 7461-7469 (2024)

[6] S. Dai, J. Chai*, J. Duan, J. Xiang, K. Han, Y. Wang, H. Xu*, J. Zhang, X. Wang, and W. Wang, "Investigation of Hf_0.5Zr_0.5O₂ Ferroelectric Films at Low Thermal Budget (300 ℃)," IEEE Transactions on Electron Devices, vol. 71, pp. 5150-5155 (2024)

[7] M. Liao, J. Chai*, J. Xiang, K. Han, Y. Wang, H. Xu, X. Wang*, J. Zhang, and W. Wang, "Wake-Up Free Hf_0.5Zr_0.5O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer," IEEE Transactions on Electron Devices, vol. 71, pp. 6022-6026 (2024)

[8] T. Hu, X. Shao, M. Bai, X. Jia, S. Dai, X. Sun, R. Han, J. Yang, X. Ke, F. Tian, S. Yang, J. Chai*, X. Hao, X. Wang, W. Wang*, and T. Ye, "Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf_0.5Zr_0.5O₂/SiO₂/Si (MIFIS) Gate Structure," IEEE Transactions on Electron Devices, vol. 71, pp. 6698-6750 (2024)

[9] S. Dai, S. Li, S. Xu, F. Tian, J. Chai, * J. Duan, W. Xiong, J. Xiang, K. Han, Y. Wang, H. Xu*, J. Zhang, X. Wang, and W. Wang, "Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors," IEEE Transactions on Electron Devices, vol. 71, pp. 5081-5088 (2024)

[10] F. Tian, X. Sun, S. Li, S. Xu, J. Chai*, J. Xiang, K. Han, Y. Wang, H. Xu*, J. Zhang, X. Wang*, and W. Wang, "Investigation of Trap Evolution of Hf_0.5Zr_0.5O₂ FeFET During Endurance Fatigue by Gate Leakage Current," IEEE Transactions on Electron Devices, vol. 71, pp. 1040-1047 (2023) 

[11] J. Chai, H. Xu, J. Xiang*, Y. Zhang, S. Zhao, F. Tian, J. Duan, K. Han, X. Wang, J. Luo, W. Wang* and T. Ye, "Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO_x at Hf_0.5Zr_0.5O₂/SiO_x Interface to Suppress Oxygen Vacancy Generation," IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 7156-7160 (2022)

[12] J. Chai, H. Xu, J. Xiang, Y. Zhang, L. Zhou, S. Zhao, F. Tian, J. Duan, K. Han, X. Wang, J. Luo, W. Wang, T. Ye, and Y. Guo, "First-principles study of oxygen vacancy defects in orthorhombic Hf_0.5Zr_0.5O₂/SiO₂/Si gate stack," Journal of Applied Physics, vol. 132, no. 10, (2022)

[13] S. Zhao, F. Tian, H. Xu*, J. Xiang*, T. Li, J. Chai*, J. Duan, K. Han, X. Wang, and W. Wang, "Experimental extraction and simulation of charge trapping during endurance of FeFET with TiN/HfZrO/SiO₂/Si (MFIS) gate structure," IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1561-1567 (2022)

[14] J. Chai, G. Yang, J. Xu, W. Wang, L. Xu, J. Wang, La induced Si₃ trimer bilayer on Si(111) surface, Physical Chemistry Chemical Physics, vol. 23, pp. 11466-11471 (2021)

[15] J. Chai, W. Wang, L. Xu, Mn-Doped Sr/Si(111)-(3 × 2) HCC Surfaces: Antiferromagnetic Semiconductors for Spintronic Applications, ACS Applied Materials & Interfaces, vol. 12,  pp. 9918-9924 (2020)

[16] J. Chai, X. Zhu, J. Wang, Structural and electronic properties of BaSi₂(100) thin film on Si(111) substrate, Journal of Materials Science, vol. 55, pp. 9483–9492 (2020)

[17] J. Chai, W. Wang, L. Xu, Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface, Physics Letters A, vol. 384, pp. 126540 (2020)